A Review of SiC Sensor Applications in High-Temperature and Radiation Extreme Environments
Sensors operating in extreme environments are currently a focal point of global research. Extreme environmental conditions, such as overload, vibration, corrosion, high pressure, high temperature, and radiation, can affect the performance of sensors to the point of failure. It is noteworthy that, co...
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MDPI AG
2024-12-01
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| Online Access: | https://www.mdpi.com/1424-8220/24/23/7731 |
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| author | Quanwei Zhang Yan Liu Huafeng Li Jue Wang Yuan Wang Fabin Cheng Haijun Han Peng Zhang |
| author_facet | Quanwei Zhang Yan Liu Huafeng Li Jue Wang Yuan Wang Fabin Cheng Haijun Han Peng Zhang |
| author_sort | Quanwei Zhang |
| collection | DOAJ |
| description | Sensors operating in extreme environments are currently a focal point of global research. Extreme environmental conditions, such as overload, vibration, corrosion, high pressure, high temperature, and radiation, can affect the performance of sensors to the point of failure. It is noteworthy that, compared to the resistance to overload and vibration achieved through structural design, the application of sensors under high-temperature and radiation extreme conditions poses a greater challenge. Silicon carbide (SiC) material, due to its excellent physical and chemical properties, such as a large band gap and high atomic critical displacement energy, demonstrates outstanding potential for application in high-temperature and radiation extreme environments. This review presents the current status and research progress of SiC sensors in high-temperature and radiation extreme environments. Finally, given the limited research on the radiation resistance of SiC sensors, it identifies several challenges and research deficiencies in the application of SiC sensors under radiation extreme environments and discusses the future development direction of SiC-based substrate sensors. |
| format | Article |
| id | doaj-art-293ebad432464d0caffa6a0f513947d4 |
| institution | OA Journals |
| issn | 1424-8220 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj-art-293ebad432464d0caffa6a0f513947d42025-08-20T02:38:51ZengMDPI AGSensors1424-82202024-12-012423773110.3390/s24237731A Review of SiC Sensor Applications in High-Temperature and Radiation Extreme EnvironmentsQuanwei Zhang0Yan Liu1Huafeng Li2Jue Wang3Yuan Wang4Fabin Cheng5Haijun Han6Peng Zhang7Institute of Systems Engineering, China Academy of Engineering Physics, Mianyang 621900, ChinaInstitute of Systems Engineering, China Academy of Engineering Physics, Mianyang 621900, ChinaInstitute of Systems Engineering, China Academy of Engineering Physics, Mianyang 621900, ChinaInstitute of Systems Engineering, China Academy of Engineering Physics, Mianyang 621900, ChinaInstitute of Systems Engineering, China Academy of Engineering Physics, Mianyang 621900, ChinaInstitute of Systems Engineering, China Academy of Engineering Physics, Mianyang 621900, ChinaInstitute of Systems Engineering, China Academy of Engineering Physics, Mianyang 621900, ChinaInstitute of Systems Engineering, China Academy of Engineering Physics, Mianyang 621900, ChinaSensors operating in extreme environments are currently a focal point of global research. Extreme environmental conditions, such as overload, vibration, corrosion, high pressure, high temperature, and radiation, can affect the performance of sensors to the point of failure. It is noteworthy that, compared to the resistance to overload and vibration achieved through structural design, the application of sensors under high-temperature and radiation extreme conditions poses a greater challenge. Silicon carbide (SiC) material, due to its excellent physical and chemical properties, such as a large band gap and high atomic critical displacement energy, demonstrates outstanding potential for application in high-temperature and radiation extreme environments. This review presents the current status and research progress of SiC sensors in high-temperature and radiation extreme environments. Finally, given the limited research on the radiation resistance of SiC sensors, it identifies several challenges and research deficiencies in the application of SiC sensors under radiation extreme environments and discusses the future development direction of SiC-based substrate sensors.https://www.mdpi.com/1424-8220/24/23/7731high temperatureradiationextreme environmentsensor technologysilicon carbide (SiC)MEMS sensors |
| spellingShingle | Quanwei Zhang Yan Liu Huafeng Li Jue Wang Yuan Wang Fabin Cheng Haijun Han Peng Zhang A Review of SiC Sensor Applications in High-Temperature and Radiation Extreme Environments Sensors high temperature radiation extreme environment sensor technology silicon carbide (SiC) MEMS sensors |
| title | A Review of SiC Sensor Applications in High-Temperature and Radiation Extreme Environments |
| title_full | A Review of SiC Sensor Applications in High-Temperature and Radiation Extreme Environments |
| title_fullStr | A Review of SiC Sensor Applications in High-Temperature and Radiation Extreme Environments |
| title_full_unstemmed | A Review of SiC Sensor Applications in High-Temperature and Radiation Extreme Environments |
| title_short | A Review of SiC Sensor Applications in High-Temperature and Radiation Extreme Environments |
| title_sort | review of sic sensor applications in high temperature and radiation extreme environments |
| topic | high temperature radiation extreme environment sensor technology silicon carbide (SiC) MEMS sensors |
| url | https://www.mdpi.com/1424-8220/24/23/7731 |
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