Effect of Aluminum Doping on the Optical, Electrical, and Gas Sensing Properties of ZnO Thin Films
The study explored the effects of aluminum doping on the optical and electrical properties of ZnO thin films, along with their gas sensing capabilities, specifically in response to blood serum. Thin films were prepared using a spin-coating method, followed by annealing at 500°C, with varying Al dopi...
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Semnan University
2025-11-01
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| Series: | Progress in Physics of Applied Materials |
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| Online Access: | https://ppam.semnan.ac.ir/article_9120_66a998cf6e3e56e0da129394175ea185.pdf |
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| author | Samundra Marasini Sumitra Pandey Rishi Ram Ghimire Pramod Subedi |
| author_facet | Samundra Marasini Sumitra Pandey Rishi Ram Ghimire Pramod Subedi |
| author_sort | Samundra Marasini |
| collection | DOAJ |
| description | The study explored the effects of aluminum doping on the optical and electrical properties of ZnO thin films, along with their gas sensing capabilities, specifically in response to blood serum. Thin films were prepared using a spin-coating method, followed by annealing at 500°C, with varying Al doping concentrations (0%, 0.5%, 1%, 1.5%, 2%, and 2.5%). The results showed that higher Al doping improved the transmittance, likely due to enhanced crystallinity and the Burstein-Moss effect, with 2.5% Al-doped ZnO exhibiting the highest transmittance of around 85%. The refractive index and extinction coefficient analyses indicated a decrease in light absorption and scattering at higher doping levels, reflecting improved film quality. The real and imaginary parts of the dielectric constant also varied with doping, with 0.5% Al-doped ZnO showing the highest real part, suggesting better dielectric properties. The optical band gap of Al-doped ZnO films decreased with increasing Al concentration, consistent with previous studies, indicating potential improvements in electrical conductivity. The electrical properties, particularly I-V characteristics, revealed that higher Al doping decreased conductivity, likely due to increased charge carrier scattering. Gas sensing experiments demonstrated that 2% Al-doped ZnO exhibited higher sensitivity to blood serum, while resistance varied with time and serum volume, highlighting the dynamic interaction between the ZnO films and their environment. The study's findings suggest that Al doping enhances the optical and sensing properties of ZnO thin films, with an optimal doping concentration around 2% for maximum sensitivity. |
| format | Article |
| id | doaj-art-290d4b70f6574d2e8eef2fdc5d3252f8 |
| institution | Kabale University |
| issn | 2783-4794 |
| language | English |
| publishDate | 2025-11-01 |
| publisher | Semnan University |
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| series | Progress in Physics of Applied Materials |
| spelling | doaj-art-290d4b70f6574d2e8eef2fdc5d3252f82025-08-20T03:49:42ZengSemnan UniversityProgress in Physics of Applied Materials2783-47942025-11-01511910.22075/ppam.2024.35384.11189120Effect of Aluminum Doping on the Optical, Electrical, and Gas Sensing Properties of ZnO Thin FilmsSamundra Marasini0Sumitra Pandey1Rishi Ram Ghimire2Pramod Subedi3Goldengate International College, Tribhuvan University, Kathmandu, NepalGoldengate International College, Tribhuvan University, Kathmandu, NepalDepartment of Physics, Patan Multiple Campus, Tribhuvan University, Patandhoka, Lalitpur, NepalPhysical Science Laboratory, Nepal Academy of Science and Technology, Lalitpur, NepalThe study explored the effects of aluminum doping on the optical and electrical properties of ZnO thin films, along with their gas sensing capabilities, specifically in response to blood serum. Thin films were prepared using a spin-coating method, followed by annealing at 500°C, with varying Al doping concentrations (0%, 0.5%, 1%, 1.5%, 2%, and 2.5%). The results showed that higher Al doping improved the transmittance, likely due to enhanced crystallinity and the Burstein-Moss effect, with 2.5% Al-doped ZnO exhibiting the highest transmittance of around 85%. The refractive index and extinction coefficient analyses indicated a decrease in light absorption and scattering at higher doping levels, reflecting improved film quality. The real and imaginary parts of the dielectric constant also varied with doping, with 0.5% Al-doped ZnO showing the highest real part, suggesting better dielectric properties. The optical band gap of Al-doped ZnO films decreased with increasing Al concentration, consistent with previous studies, indicating potential improvements in electrical conductivity. The electrical properties, particularly I-V characteristics, revealed that higher Al doping decreased conductivity, likely due to increased charge carrier scattering. Gas sensing experiments demonstrated that 2% Al-doped ZnO exhibited higher sensitivity to blood serum, while resistance varied with time and serum volume, highlighting the dynamic interaction between the ZnO films and their environment. The study's findings suggest that Al doping enhances the optical and sensing properties of ZnO thin films, with an optimal doping concentration around 2% for maximum sensitivity.https://ppam.semnan.ac.ir/article_9120_66a998cf6e3e56e0da129394175ea185.pdfaluminum dopingzno thin filmsoptical propertieselectrical propertiesblood serum |
| spellingShingle | Samundra Marasini Sumitra Pandey Rishi Ram Ghimire Pramod Subedi Effect of Aluminum Doping on the Optical, Electrical, and Gas Sensing Properties of ZnO Thin Films Progress in Physics of Applied Materials aluminum doping zno thin films optical properties electrical properties blood serum |
| title | Effect of Aluminum Doping on the Optical, Electrical, and Gas Sensing Properties of ZnO Thin Films |
| title_full | Effect of Aluminum Doping on the Optical, Electrical, and Gas Sensing Properties of ZnO Thin Films |
| title_fullStr | Effect of Aluminum Doping on the Optical, Electrical, and Gas Sensing Properties of ZnO Thin Films |
| title_full_unstemmed | Effect of Aluminum Doping on the Optical, Electrical, and Gas Sensing Properties of ZnO Thin Films |
| title_short | Effect of Aluminum Doping on the Optical, Electrical, and Gas Sensing Properties of ZnO Thin Films |
| title_sort | effect of aluminum doping on the optical electrical and gas sensing properties of zno thin films |
| topic | aluminum doping zno thin films optical properties electrical properties blood serum |
| url | https://ppam.semnan.ac.ir/article_9120_66a998cf6e3e56e0da129394175ea185.pdf |
| work_keys_str_mv | AT samundramarasini effectofaluminumdopingontheopticalelectricalandgassensingpropertiesofznothinfilms AT sumitrapandey effectofaluminumdopingontheopticalelectricalandgassensingpropertiesofznothinfilms AT rishiramghimire effectofaluminumdopingontheopticalelectricalandgassensingpropertiesofznothinfilms AT pramodsubedi effectofaluminumdopingontheopticalelectricalandgassensingpropertiesofznothinfilms |