A Simple Distributed RGC Model of MOSFET for Pre-Pinch Off Region
The differential equation describing the small signal behavior of a MOSFET channel is derived. Based on the analogy of the channel to distributed transmission lines, which has been very well established in literature, an entirely new RGC line model of MOSFET is presented. The element values of the l...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
1988-01-01
|
| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1988/19619 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832564524813647872 |
|---|---|
| author | Umesh Kumar Arun Mirchandani |
| author_facet | Umesh Kumar Arun Mirchandani |
| author_sort | Umesh Kumar |
| collection | DOAJ |
| description | The differential equation describing the small signal behavior of a MOSFET channel is
derived. Based on the analogy of the channel to distributed transmission lines, which
has been very well established in literature, an entirely new RGC line model of
MOSFET is presented. The element values of the line are determined by equivalence
to a general distributed transmission line and subsequently the model is lumped into a
single section in two possible Π and T representations. The postulated model
considerably simplifies the study of the properties and behavior of MOSFET structures
and can be suitably utilized in analysis and Computer Aided Design. |
| format | Article |
| id | doaj-art-28f34ee4a1454882b8a620244992b663 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 1988-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-28f34ee4a1454882b8a620244992b6632025-02-03T01:10:49ZengWileyActive and Passive Electronic Components0882-75161563-50311988-01-01131556510.1155/1988/19619A Simple Distributed RGC Model of MOSFET for Pre-Pinch Off RegionUmesh Kumar0Arun Mirchandani1Department of Electrical Engineering, Indian Institute of Technology, Hauz Khas, New Delhi 11O16, IndiaDepartment of Electrical Engineering, Indian Institute of Technology, Hauz Khas, New Delhi 11O16, IndiaThe differential equation describing the small signal behavior of a MOSFET channel is derived. Based on the analogy of the channel to distributed transmission lines, which has been very well established in literature, an entirely new RGC line model of MOSFET is presented. The element values of the line are determined by equivalence to a general distributed transmission line and subsequently the model is lumped into a single section in two possible Π and T representations. The postulated model considerably simplifies the study of the properties and behavior of MOSFET structures and can be suitably utilized in analysis and Computer Aided Design.http://dx.doi.org/10.1155/1988/19619 |
| spellingShingle | Umesh Kumar Arun Mirchandani A Simple Distributed RGC Model of MOSFET for Pre-Pinch Off Region Active and Passive Electronic Components |
| title | A Simple Distributed RGC Model of MOSFET for Pre-Pinch Off Region |
| title_full | A Simple Distributed RGC Model of MOSFET for Pre-Pinch Off Region |
| title_fullStr | A Simple Distributed RGC Model of MOSFET for Pre-Pinch Off Region |
| title_full_unstemmed | A Simple Distributed RGC Model of MOSFET for Pre-Pinch Off Region |
| title_short | A Simple Distributed RGC Model of MOSFET for Pre-Pinch Off Region |
| title_sort | simple distributed rgc model of mosfet for pre pinch off region |
| url | http://dx.doi.org/10.1155/1988/19619 |
| work_keys_str_mv | AT umeshkumar asimpledistributedrgcmodelofmosfetforprepinchoffregion AT arunmirchandani asimpledistributedrgcmodelofmosfetforprepinchoffregion AT umeshkumar simpledistributedrgcmodelofmosfetforprepinchoffregion AT arunmirchandani simpledistributedrgcmodelofmosfetforprepinchoffregion |