Monolithically Integrated GaAs Nanoislands on CMOS-Compatible Si Nanotips Using GS-MBE
The monolithic integration of III-V semiconductors with silicon (Si) is a critical step toward advancing optoelectronic and photonic devices. In this work, we present GaAs nanoheteroepitaxy (NHE) on Si nanotips using gas-source molecular beam epitaxy (GS-MBE). We discuss the selective growth of full...
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2025-07-01
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| author | Adriana Rodrigues Anagha Kamath Hannah-Sophie Illner Navid Kafi Oliver Skibitzki Martin Schmidbauer Fariba Hatami |
| author_facet | Adriana Rodrigues Anagha Kamath Hannah-Sophie Illner Navid Kafi Oliver Skibitzki Martin Schmidbauer Fariba Hatami |
| author_sort | Adriana Rodrigues |
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| description | The monolithic integration of III-V semiconductors with silicon (Si) is a critical step toward advancing optoelectronic and photonic devices. In this work, we present GaAs nanoheteroepitaxy (NHE) on Si nanotips using gas-source molecular beam epitaxy (GS-MBE). We discuss the selective growth of fully relaxed GaAs nanoislands on complementary metal oxide semiconductor (CMOS)-compatible Si(001) nanotip wafers. Nanotip wafers were fabricated using a state-of-the-art 0.13 μm SiGe Bipolar CMOS pilot line on 200 mm wafers. Our investigation focuses on understanding the influence of the growth conditions on the morphology, crystalline structure, and defect formation of the GaAs islands. The morphological, structural, and optical properties of the GaAs islands were characterized using scanning electron microscopy, high-resolution X-ray diffraction, and photoluminescence spectroscopy. For samples with less deposition, the GaAs islands exhibit a monomodal size distribution, with an average effective diameter ranging between 100 and 280 nm. These islands display four distinct facet orientations corresponding to the {001} planes. As the deposition increases, larger islands with multiple crystallographic facets emerge, accompanied by a transition from a monomodal to a bimodal growth mode. Single twinning is observed in all samples. However, with increasing deposition, not only a bimodal size distribution occurs, but also the volume fraction of the twinned material increases significantly. These findings shed light on the growth dynamics of nanoheteroepitaxial GaAs and contribute to ongoing efforts toward CMOS-compatible Si-based nanophotonic technologies. |
| format | Article |
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| institution | Kabale University |
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| language | English |
| publishDate | 2025-07-01 |
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| spelling | doaj-art-28dc4aecd4df43cbaa4ead66d342a7552025-08-20T03:32:17ZengMDPI AGNanomaterials2079-49912025-07-011514108310.3390/nano15141083Monolithically Integrated GaAs Nanoislands on CMOS-Compatible Si Nanotips Using GS-MBEAdriana Rodrigues0Anagha Kamath1Hannah-Sophie Illner2Navid Kafi3Oliver Skibitzki4Martin Schmidbauer5Fariba Hatami6Institut für Physik, Humboldt Universität zu Berlin, Newtonstr. 15, 12489 Berlin, GermanyInstitut für Physik, Humboldt Universität zu Berlin, Newtonstr. 15, 12489 Berlin, GermanyInstitut für Physik, Humboldt Universität zu Berlin, Newtonstr. 15, 12489 Berlin, GermanyInstitut für Physik, Humboldt Universität zu Berlin, Newtonstr. 15, 12489 Berlin, GermanyIHP-Leibniz Institut für Innovative Mikroelektronik, 15236 Frankfurt (Oder), GermanyLeibniz Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, GermanyInstitut für Physik, Humboldt Universität zu Berlin, Newtonstr. 15, 12489 Berlin, GermanyThe monolithic integration of III-V semiconductors with silicon (Si) is a critical step toward advancing optoelectronic and photonic devices. In this work, we present GaAs nanoheteroepitaxy (NHE) on Si nanotips using gas-source molecular beam epitaxy (GS-MBE). We discuss the selective growth of fully relaxed GaAs nanoislands on complementary metal oxide semiconductor (CMOS)-compatible Si(001) nanotip wafers. Nanotip wafers were fabricated using a state-of-the-art 0.13 μm SiGe Bipolar CMOS pilot line on 200 mm wafers. Our investigation focuses on understanding the influence of the growth conditions on the morphology, crystalline structure, and defect formation of the GaAs islands. The morphological, structural, and optical properties of the GaAs islands were characterized using scanning electron microscopy, high-resolution X-ray diffraction, and photoluminescence spectroscopy. For samples with less deposition, the GaAs islands exhibit a monomodal size distribution, with an average effective diameter ranging between 100 and 280 nm. These islands display four distinct facet orientations corresponding to the {001} planes. As the deposition increases, larger islands with multiple crystallographic facets emerge, accompanied by a transition from a monomodal to a bimodal growth mode. Single twinning is observed in all samples. However, with increasing deposition, not only a bimodal size distribution occurs, but also the volume fraction of the twinned material increases significantly. These findings shed light on the growth dynamics of nanoheteroepitaxial GaAs and contribute to ongoing efforts toward CMOS-compatible Si-based nanophotonic technologies.https://www.mdpi.com/2079-4991/15/14/1083epitaxial GaAs on SinanoheteroepitaxydefectsSi photonics |
| spellingShingle | Adriana Rodrigues Anagha Kamath Hannah-Sophie Illner Navid Kafi Oliver Skibitzki Martin Schmidbauer Fariba Hatami Monolithically Integrated GaAs Nanoislands on CMOS-Compatible Si Nanotips Using GS-MBE Nanomaterials epitaxial GaAs on Si nanoheteroepitaxy defects Si photonics |
| title | Monolithically Integrated GaAs Nanoislands on CMOS-Compatible Si Nanotips Using GS-MBE |
| title_full | Monolithically Integrated GaAs Nanoislands on CMOS-Compatible Si Nanotips Using GS-MBE |
| title_fullStr | Monolithically Integrated GaAs Nanoislands on CMOS-Compatible Si Nanotips Using GS-MBE |
| title_full_unstemmed | Monolithically Integrated GaAs Nanoislands on CMOS-Compatible Si Nanotips Using GS-MBE |
| title_short | Monolithically Integrated GaAs Nanoislands on CMOS-Compatible Si Nanotips Using GS-MBE |
| title_sort | monolithically integrated gaas nanoislands on cmos compatible si nanotips using gs mbe |
| topic | epitaxial GaAs on Si nanoheteroepitaxy defects Si photonics |
| url | https://www.mdpi.com/2079-4991/15/14/1083 |
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