Co3O4-graphene core-shell QDs-PMMA insulating polymer composites structured nonvolatile bistable memory devices
Nonvolatile hybrid inorganic/organic bistable memory devices fabricated utilizing Co3O4-graphene core-shell quantum dots (QDs) embedded in an insulating poly (methyl methacrylate) (PMMA) polymer matrix as active layer which were fabricated using a spin-coating technique. To improve the quantum confi...
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Elsevier
2025-04-01
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| Series: | Carbon Trends |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2667056925000239 |
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| author | Jinseo Park Jaeho Shim Dong Ick Son |
| author_facet | Jinseo Park Jaeho Shim Dong Ick Son |
| author_sort | Jinseo Park |
| collection | DOAJ |
| description | Nonvolatile hybrid inorganic/organic bistable memory devices fabricated utilizing Co3O4-graphene core-shell quantum dots (QDs) embedded in an insulating poly (methyl methacrylate) (PMMA) polymer matrix as active layer which were fabricated using a spin-coating technique. To improve the quantum confinement of Co3O4 QD, graphene, which has high electron affinity, was synthesized with Co3O4 QD core as a shell to form a core-shell structure that serves as an excellent trap site. Transmission electron microscopy (TEM) images revealed that Co3O4-graphene core-shell QDs with a diameter of approximately 5 nm were formed among the PMMA polymer matrix. Current-voltage (I-V) measurements on Al/ Co3O4-graphene core-shell QDs embedded in PMMA polymer matrix/indium-tin-oxide (ITO) devices at 300 K showed electrical bistability. The maximum ON/OFF ratio of the current bistability for the OBMDs was as large as 1.8 × 104, the cycling endurance for the devices was above 2.5 × 103 cycles, and retention times for the devices were larger than 5.8 × 104 s. The carrier transport mechanisms for the devices were described by fitting the experimental I-V data using several models. |
| format | Article |
| id | doaj-art-28d75c7b44bb44ee9bff33c05291d873 |
| institution | OA Journals |
| issn | 2667-0569 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Elsevier |
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| series | Carbon Trends |
| spelling | doaj-art-28d75c7b44bb44ee9bff33c05291d8732025-08-20T02:12:07ZengElsevierCarbon Trends2667-05692025-04-011910047310.1016/j.cartre.2025.100473Co3O4-graphene core-shell QDs-PMMA insulating polymer composites structured nonvolatile bistable memory devicesJinseo Park0Jaeho Shim1Dong Ick Son2Institute of Advanced Composite Materials, Korea Institute of Science and Technology, 92 Chudong-ro, Bongdong-eup, Wanju-gun, Jeollabuk-do 55324, Republic of Korea; Division of Advanced Materials Engineering, Engineering College, Research Center for Advanced Materials Development (RCAMD), Jeonbuk National University (JBNU), Jeonju 54896, Republic of KoreaInstitute of Advanced Composite Materials, Korea Institute of Science and Technology, 92 Chudong-ro, Bongdong-eup, Wanju-gun, Jeollabuk-do 55324, Republic of Korea; Corresponding authors.Institute of Advanced Composite Materials, Korea Institute of Science and Technology, 92 Chudong-ro, Bongdong-eup, Wanju-gun, Jeollabuk-do 55324, Republic of Korea; KIST School, Department of Nanomaterials and Nano Science, University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon 34113, Republic of Korea; Corresponding authors.Nonvolatile hybrid inorganic/organic bistable memory devices fabricated utilizing Co3O4-graphene core-shell quantum dots (QDs) embedded in an insulating poly (methyl methacrylate) (PMMA) polymer matrix as active layer which were fabricated using a spin-coating technique. To improve the quantum confinement of Co3O4 QD, graphene, which has high electron affinity, was synthesized with Co3O4 QD core as a shell to form a core-shell structure that serves as an excellent trap site. Transmission electron microscopy (TEM) images revealed that Co3O4-graphene core-shell QDs with a diameter of approximately 5 nm were formed among the PMMA polymer matrix. Current-voltage (I-V) measurements on Al/ Co3O4-graphene core-shell QDs embedded in PMMA polymer matrix/indium-tin-oxide (ITO) devices at 300 K showed electrical bistability. The maximum ON/OFF ratio of the current bistability for the OBMDs was as large as 1.8 × 104, the cycling endurance for the devices was above 2.5 × 103 cycles, and retention times for the devices were larger than 5.8 × 104 s. The carrier transport mechanisms for the devices were described by fitting the experimental I-V data using several models.http://www.sciencedirect.com/science/article/pii/S2667056925000239CO3O4GrapheneQuantum dotPolymerNanocompositesNonvolatile |
| spellingShingle | Jinseo Park Jaeho Shim Dong Ick Son Co3O4-graphene core-shell QDs-PMMA insulating polymer composites structured nonvolatile bistable memory devices Carbon Trends CO3O4 Graphene Quantum dot Polymer Nanocomposites Nonvolatile |
| title | Co3O4-graphene core-shell QDs-PMMA insulating polymer composites structured nonvolatile bistable memory devices |
| title_full | Co3O4-graphene core-shell QDs-PMMA insulating polymer composites structured nonvolatile bistable memory devices |
| title_fullStr | Co3O4-graphene core-shell QDs-PMMA insulating polymer composites structured nonvolatile bistable memory devices |
| title_full_unstemmed | Co3O4-graphene core-shell QDs-PMMA insulating polymer composites structured nonvolatile bistable memory devices |
| title_short | Co3O4-graphene core-shell QDs-PMMA insulating polymer composites structured nonvolatile bistable memory devices |
| title_sort | co3o4 graphene core shell qds pmma insulating polymer composites structured nonvolatile bistable memory devices |
| topic | CO3O4 Graphene Quantum dot Polymer Nanocomposites Nonvolatile |
| url | http://www.sciencedirect.com/science/article/pii/S2667056925000239 |
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