Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga2O3 Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices
Abstract In this work, the out‐diffusion and uphill‐diffusion of Mg inside (100) β‐Ga2O3 epilayers and substrates are reported. The Mg accumulates toward the (100) surface upon annealing under an oxidizing environment, whereas the concentration profile changes with annealing temperatures and duratio...
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Wiley-VCH
2025-01-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400342 |
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| author | Ta‐Shun Chou Thi Thuy Vi Tran Hartwin Peelaers Kornelius Tetzner Oliver Hilt Jana Rehm Saud Bin Anooz Andreas Fiedler Zbigniew Galazka Martin Albrecht Andreas Popp |
| author_facet | Ta‐Shun Chou Thi Thuy Vi Tran Hartwin Peelaers Kornelius Tetzner Oliver Hilt Jana Rehm Saud Bin Anooz Andreas Fiedler Zbigniew Galazka Martin Albrecht Andreas Popp |
| author_sort | Ta‐Shun Chou |
| collection | DOAJ |
| description | Abstract In this work, the out‐diffusion and uphill‐diffusion of Mg inside (100) β‐Ga2O3 epilayers and substrates are reported. The Mg accumulates toward the (100) surface upon annealing under an oxidizing environment, whereas the concentration profile changes with annealing temperatures and durations. Furthermore, the out‐diffusion of Mg from the substrate into the epilayer is observed at temperatures above 800 °C, which continues during the film growth. The substitutional‐interstitial‐diffusion (SID) mechanism is suggested to be the driving mechanism for the former, and the latter is related to the diffusion of mobile Mg interstitials. The accumulation profile of Mg can be used to identify the interface between the epilayer and the substrate. Furthermore, significant differences in device performance are observed for power transistors fabricated on annealed and non‐annealed epitaxial β‐Ga2O3 wafers. Increased breakdown voltages of annealed samples are attributed to the Mg diffusion into the first few nanometers of the epitaxial layer close to the interface to the semi‐insulating substrate, leading to compensation of residual dopants (donors) in that region. |
| format | Article |
| id | doaj-art-28ca47b7116d4b5eaec4eb9fc0b34688 |
| institution | Kabale University |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-28ca47b7116d4b5eaec4eb9fc0b346882025-01-10T13:40:16ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-01-01111n/an/a10.1002/aelm.202400342Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga2O3 Under High‐Temperature Annealing and Its Influence on Lateral MOSFET DevicesTa‐Shun Chou0Thi Thuy Vi Tran1Hartwin Peelaers2Kornelius Tetzner3Oliver Hilt4Jana Rehm5Saud Bin Anooz6Andreas Fiedler7Zbigniew Galazka8Martin Albrecht9Andreas Popp10Leibniz‐Institut für Kristallzüchtung (IKZ) Max‐Born‐Str. 2 12489 Berlin GermanyLeibniz‐Institut für Kristallzüchtung (IKZ) Max‐Born‐Str. 2 12489 Berlin GermanyDepartment of Physics and Astronomy University of Kansas Lawrence KS 66045 USAFerdinand‐Braun‐Institut (FBH) Gustav‐Kirchhoff‐Str. 4 12489 Berlin GermanyFerdinand‐Braun‐Institut (FBH) Gustav‐Kirchhoff‐Str. 4 12489 Berlin GermanyLeibniz‐Institut für Kristallzüchtung (IKZ) Max‐Born‐Str. 2 12489 Berlin GermanyLeibniz‐Institut für Kristallzüchtung (IKZ) Max‐Born‐Str. 2 12489 Berlin GermanyLeibniz‐Institut für Kristallzüchtung (IKZ) Max‐Born‐Str. 2 12489 Berlin GermanyLeibniz‐Institut für Kristallzüchtung (IKZ) Max‐Born‐Str. 2 12489 Berlin GermanyLeibniz‐Institut für Kristallzüchtung (IKZ) Max‐Born‐Str. 2 12489 Berlin GermanyLeibniz‐Institut für Kristallzüchtung (IKZ) Max‐Born‐Str. 2 12489 Berlin GermanyAbstract In this work, the out‐diffusion and uphill‐diffusion of Mg inside (100) β‐Ga2O3 epilayers and substrates are reported. The Mg accumulates toward the (100) surface upon annealing under an oxidizing environment, whereas the concentration profile changes with annealing temperatures and durations. Furthermore, the out‐diffusion of Mg from the substrate into the epilayer is observed at temperatures above 800 °C, which continues during the film growth. The substitutional‐interstitial‐diffusion (SID) mechanism is suggested to be the driving mechanism for the former, and the latter is related to the diffusion of mobile Mg interstitials. The accumulation profile of Mg can be used to identify the interface between the epilayer and the substrate. Furthermore, significant differences in device performance are observed for power transistors fabricated on annealed and non‐annealed epitaxial β‐Ga2O3 wafers. Increased breakdown voltages of annealed samples are attributed to the Mg diffusion into the first few nanometers of the epitaxial layer close to the interface to the semi‐insulating substrate, leading to compensation of residual dopants (donors) in that region.https://doi.org/10.1002/aelm.202400342β‐Ga2O3diffusionMOVPE |
| spellingShingle | Ta‐Shun Chou Thi Thuy Vi Tran Hartwin Peelaers Kornelius Tetzner Oliver Hilt Jana Rehm Saud Bin Anooz Andreas Fiedler Zbigniew Galazka Martin Albrecht Andreas Popp Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga2O3 Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices Advanced Electronic Materials β‐Ga2O3 diffusion MOVPE |
| title | Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga2O3 Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices |
| title_full | Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga2O3 Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices |
| title_fullStr | Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga2O3 Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices |
| title_full_unstemmed | Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga2O3 Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices |
| title_short | Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga2O3 Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices |
| title_sort | out diffusion and uphill diffusion of mg in czochralski grown 100 β ga2o3 under high temperature annealing and its influence on lateral mosfet devices |
| topic | β‐Ga2O3 diffusion MOVPE |
| url | https://doi.org/10.1002/aelm.202400342 |
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