Method for Removing Impurities by Treating Silicon Tetrachloride with Hydrogen Plasma
The transformation of organochlorine and organic impurities such as CCl<sub>4</sub>, C<sub>2</sub>H<sub>2</sub>Cl<sub>2</sub>, C<sub>2</sub>HCl<sub>3</sub>, C<sub>2</sub>Cl<sub>4</sub>, C<sub>2</...
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MDPI AG
2025-03-01
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| Series: | Inorganics |
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| Online Access: | https://www.mdpi.com/2304-6740/13/3/80 |
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| author | Roman Kornev Georgy Mochalov Nikita Maleev Sergei Romanov Konstantin Kornev Alexandra Kalinina |
| author_facet | Roman Kornev Georgy Mochalov Nikita Maleev Sergei Romanov Konstantin Kornev Alexandra Kalinina |
| author_sort | Roman Kornev |
| collection | DOAJ |
| description | The transformation of organochlorine and organic impurities such as CCl<sub>4</sub>, C<sub>2</sub>H<sub>2</sub>Cl<sub>2</sub>, C<sub>2</sub>HCl<sub>3</sub>, C<sub>2</sub>Cl<sub>4</sub>, C<sub>2</sub>H<sub>2</sub>Cl<sub>4</sub>, CH<sub>4</sub>, C<sub>3</sub>H<sub>8</sub>, C<sub>4</sub>H<sub>10</sub>, and C<sub>6</sub>H<sub>6</sub> in the content range of 10<sup>−2</sup>–10<sup>−6</sup> wt.%, as well as BCl<sub>3</sub> impurities at the level of 3 × 10<sup>−2</sup> wt.%, was considered. A method has been developed for removing limiting impurities of carbon and boron during the process of the hydrogen reduction of silicon tetrachloride in a high-frequency arc gas discharge at atmospheric pressure. The thermodynamic and gas-dynamic analyses of the reduction process of silicon tetrachloride in hydrogen plasma, along with the behavior of organochlorine impurities, organic substances, and boron trichloride, was conducted. These analyses suggest that under equilibrium conditions, the conversion reactions of impurities result in the formation of silicon carbide and boron silicide. Potential chemical reactions for the conversion of the studied impurities into silicon carbide and boron silicide have been proposed. A new potential for plasma chemical processes has been identified, enabling the effective purification of chlorosilanes from both limiting and limited impurities. The results demonstrate the possibility of significantly reducing the concentrations of organochlorine and organic impurities, as well as boron trichloride, during the reduction of silicon tetrachloride in hydrogen plasma. The maximum conversion rates achieved included 99% for the organochlorine impurity CCl<sub>4</sub> to silicon carbide, 91% for benzene impurity to silicon carbide, and 86% for boron trichloride to boron silicide. |
| format | Article |
| id | doaj-art-28ac5fec16dc47e4b6125c09d2339cdd |
| institution | Kabale University |
| issn | 2304-6740 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | MDPI AG |
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| series | Inorganics |
| spelling | doaj-art-28ac5fec16dc47e4b6125c09d2339cdd2025-08-20T03:43:03ZengMDPI AGInorganics2304-67402025-03-011338010.3390/inorganics13030080Method for Removing Impurities by Treating Silicon Tetrachloride with Hydrogen PlasmaRoman Kornev0Georgy Mochalov1Nikita Maleev2Sergei Romanov3Konstantin Kornev4Alexandra Kalinina5Institute of Chemistry and High-Purity Substances Named after G. G. Devyatykh, Russian Academy of Sciences, Tropinina, 49, 603951 Nizhny Novgorod, RussiaDepartment of Nanotechnology and Biotechnology, R. E. Alekseev Nizhny Novgorod Technical University, Minin St., 24, 603155 Nizhny Novgorod, RussiaDepartment of Nanotechnology and Biotechnology, R. E. Alekseev Nizhny Novgorod Technical University, Minin St., 24, 603155 Nizhny Novgorod, RussiaDepartment of Nanotechnology and Biotechnology, R. E. Alekseev Nizhny Novgorod Technical University, Minin St., 24, 603155 Nizhny Novgorod, RussiaDepartment of of Chemistry, National Research Lobachevsky State University of Nizhny Novgorod, Prospekt Gagarina 23, 603022 Nizhny Novgorod, RussiaDepartment of Nanotechnology and Biotechnology, R. E. Alekseev Nizhny Novgorod Technical University, Minin St., 24, 603155 Nizhny Novgorod, RussiaThe transformation of organochlorine and organic impurities such as CCl<sub>4</sub>, C<sub>2</sub>H<sub>2</sub>Cl<sub>2</sub>, C<sub>2</sub>HCl<sub>3</sub>, C<sub>2</sub>Cl<sub>4</sub>, C<sub>2</sub>H<sub>2</sub>Cl<sub>4</sub>, CH<sub>4</sub>, C<sub>3</sub>H<sub>8</sub>, C<sub>4</sub>H<sub>10</sub>, and C<sub>6</sub>H<sub>6</sub> in the content range of 10<sup>−2</sup>–10<sup>−6</sup> wt.%, as well as BCl<sub>3</sub> impurities at the level of 3 × 10<sup>−2</sup> wt.%, was considered. A method has been developed for removing limiting impurities of carbon and boron during the process of the hydrogen reduction of silicon tetrachloride in a high-frequency arc gas discharge at atmospheric pressure. The thermodynamic and gas-dynamic analyses of the reduction process of silicon tetrachloride in hydrogen plasma, along with the behavior of organochlorine impurities, organic substances, and boron trichloride, was conducted. These analyses suggest that under equilibrium conditions, the conversion reactions of impurities result in the formation of silicon carbide and boron silicide. Potential chemical reactions for the conversion of the studied impurities into silicon carbide and boron silicide have been proposed. A new potential for plasma chemical processes has been identified, enabling the effective purification of chlorosilanes from both limiting and limited impurities. The results demonstrate the possibility of significantly reducing the concentrations of organochlorine and organic impurities, as well as boron trichloride, during the reduction of silicon tetrachloride in hydrogen plasma. The maximum conversion rates achieved included 99% for the organochlorine impurity CCl<sub>4</sub> to silicon carbide, 91% for benzene impurity to silicon carbide, and 86% for boron trichloride to boron silicide.https://www.mdpi.com/2304-6740/13/3/80gas dischargehydrogen reductionsilicon chloridetrichlorosilanesilaneorganochlorine impurities |
| spellingShingle | Roman Kornev Georgy Mochalov Nikita Maleev Sergei Romanov Konstantin Kornev Alexandra Kalinina Method for Removing Impurities by Treating Silicon Tetrachloride with Hydrogen Plasma Inorganics gas discharge hydrogen reduction silicon chloride trichlorosilane silane organochlorine impurities |
| title | Method for Removing Impurities by Treating Silicon Tetrachloride with Hydrogen Plasma |
| title_full | Method for Removing Impurities by Treating Silicon Tetrachloride with Hydrogen Plasma |
| title_fullStr | Method for Removing Impurities by Treating Silicon Tetrachloride with Hydrogen Plasma |
| title_full_unstemmed | Method for Removing Impurities by Treating Silicon Tetrachloride with Hydrogen Plasma |
| title_short | Method for Removing Impurities by Treating Silicon Tetrachloride with Hydrogen Plasma |
| title_sort | method for removing impurities by treating silicon tetrachloride with hydrogen plasma |
| topic | gas discharge hydrogen reduction silicon chloride trichlorosilane silane organochlorine impurities |
| url | https://www.mdpi.com/2304-6740/13/3/80 |
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