Origin of the Temperature Dependence of Gate-Induced Drain Leakage-Assisted Erase in Three-Dimensional <span style="font-variant: small-caps">nand</span> Flash Memories
Through detailed experimental and modeling activities, this paper investigates the origin of the temperature dependence of the Erase operation in 3D <span style="font-variant: small-caps;">nand</span> flash arrays. First of all, experimental data collected down to the cryogenic...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-12-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/15/12/1516 |
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