Perspective on vertical Ga2O3 power MOSFETs utilizing current blocking layer technology
Beta-gallium oxide ( β -Ga _2 O _3 ) power device research activity in the past decade has seen a significant surge due to its remarkable material properties. With an ultra-wide bandgap of 4.8 eV, leading to a high breakdown field of 8 MV cm ^−1 , combined with well-established melt-grown substrate...
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| Main Author: | |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | JPhys Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2515-7639/add774 |
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