Perspective on vertical Ga2O3 power MOSFETs utilizing current blocking layer technology
Beta-gallium oxide ( β -Ga _2 O _3 ) power device research activity in the past decade has seen a significant surge due to its remarkable material properties. With an ultra-wide bandgap of 4.8 eV, leading to a high breakdown field of 8 MV cm ^−1 , combined with well-established melt-grown substrate...
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IOP Publishing
2025-01-01
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| Series: | JPhys Materials |
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| Online Access: | https://doi.org/10.1088/2515-7639/add774 |
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| author | Ke Zeng |
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| author_sort | Ke Zeng |
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| description | Beta-gallium oxide ( β -Ga _2 O _3 ) power device research activity in the past decade has seen a significant surge due to its remarkable material properties. With an ultra-wide bandgap of 4.8 eV, leading to a high breakdown field of 8 MV cm ^−1 , combined with well-established melt-grown substrate technology, β -Ga _2 O _3 presents an exceptional opportunity to significantly advance power device technology. However, the highly localized holes and large acceptor activation energies render effective p-type doping in Ga _2 O _3 extremely challenging. This has severely hindered the realization of conventional n–p–n type vertical power transistors in β -Ga _2 O _3 . Different strategies have been proposed and demonstrated to address this issue. In this perspective, we focus on one of the emerging solutions: using a current-blocking-layer (CBL) to mimic the functionality of the absent p-type layer to realize a vertical transistor with comparable performance. The progress made so far on different CBL designs in vertical β -Ga _2 O _3 MOSFETs will be examined. The future outlook for Mg diffused CBL-enabled Ga _2 O _3 vertical diffused barrier field-effect-transistor (VDBFET) is presented. |
| format | Article |
| id | doaj-art-283d769f25474bb5a74a5c8abf7023b0 |
| institution | DOAJ |
| issn | 2515-7639 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
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| series | JPhys Materials |
| spelling | doaj-art-283d769f25474bb5a74a5c8abf7023b02025-08-20T03:07:58ZengIOP PublishingJPhys Materials2515-76392025-01-018303100210.1088/2515-7639/add774Perspective on vertical Ga2O3 power MOSFETs utilizing current blocking layer technologyKe Zeng0https://orcid.org/0000-0001-5619-6418Department of Electrical and Computer Engineering, University of North Carolina at Charlotte , Charlotte, NC 28223, United States of AmericaBeta-gallium oxide ( β -Ga _2 O _3 ) power device research activity in the past decade has seen a significant surge due to its remarkable material properties. With an ultra-wide bandgap of 4.8 eV, leading to a high breakdown field of 8 MV cm ^−1 , combined with well-established melt-grown substrate technology, β -Ga _2 O _3 presents an exceptional opportunity to significantly advance power device technology. However, the highly localized holes and large acceptor activation energies render effective p-type doping in Ga _2 O _3 extremely challenging. This has severely hindered the realization of conventional n–p–n type vertical power transistors in β -Ga _2 O _3 . Different strategies have been proposed and demonstrated to address this issue. In this perspective, we focus on one of the emerging solutions: using a current-blocking-layer (CBL) to mimic the functionality of the absent p-type layer to realize a vertical transistor with comparable performance. The progress made so far on different CBL designs in vertical β -Ga _2 O _3 MOSFETs will be examined. The future outlook for Mg diffused CBL-enabled Ga _2 O _3 vertical diffused barrier field-effect-transistor (VDBFET) is presented.https://doi.org/10.1088/2515-7639/add774Ga2O3current blocking layerMOSFETwide bandgap semiconductorpower deviceVDBFET |
| spellingShingle | Ke Zeng Perspective on vertical Ga2O3 power MOSFETs utilizing current blocking layer technology JPhys Materials Ga2O3 current blocking layer MOSFET wide bandgap semiconductor power device VDBFET |
| title | Perspective on vertical Ga2O3 power MOSFETs utilizing current blocking layer technology |
| title_full | Perspective on vertical Ga2O3 power MOSFETs utilizing current blocking layer technology |
| title_fullStr | Perspective on vertical Ga2O3 power MOSFETs utilizing current blocking layer technology |
| title_full_unstemmed | Perspective on vertical Ga2O3 power MOSFETs utilizing current blocking layer technology |
| title_short | Perspective on vertical Ga2O3 power MOSFETs utilizing current blocking layer technology |
| title_sort | perspective on vertical ga2o3 power mosfets utilizing current blocking layer technology |
| topic | Ga2O3 current blocking layer MOSFET wide bandgap semiconductor power device VDBFET |
| url | https://doi.org/10.1088/2515-7639/add774 |
| work_keys_str_mv | AT kezeng perspectiveonverticalga2o3powermosfetsutilizingcurrentblockinglayertechnology |