Perspective on vertical Ga2O3 power MOSFETs utilizing current blocking layer technology
Beta-gallium oxide ( β -Ga _2 O _3 ) power device research activity in the past decade has seen a significant surge due to its remarkable material properties. With an ultra-wide bandgap of 4.8 eV, leading to a high breakdown field of 8 MV cm ^−1 , combined with well-established melt-grown substrate...
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | JPhys Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2515-7639/add774 |
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| Summary: | Beta-gallium oxide ( β -Ga _2 O _3 ) power device research activity in the past decade has seen a significant surge due to its remarkable material properties. With an ultra-wide bandgap of 4.8 eV, leading to a high breakdown field of 8 MV cm ^−1 , combined with well-established melt-grown substrate technology, β -Ga _2 O _3 presents an exceptional opportunity to significantly advance power device technology. However, the highly localized holes and large acceptor activation energies render effective p-type doping in Ga _2 O _3 extremely challenging. This has severely hindered the realization of conventional n–p–n type vertical power transistors in β -Ga _2 O _3 . Different strategies have been proposed and demonstrated to address this issue. In this perspective, we focus on one of the emerging solutions: using a current-blocking-layer (CBL) to mimic the functionality of the absent p-type layer to realize a vertical transistor with comparable performance. The progress made so far on different CBL designs in vertical β -Ga _2 O _3 MOSFETs will be examined. The future outlook for Mg diffused CBL-enabled Ga _2 O _3 vertical diffused barrier field-effect-transistor (VDBFET) is presented. |
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| ISSN: | 2515-7639 |