Improvement of light extraction and carrier injection in far UV-C LEDs on AlN substrate via conductive p-Al0.45Ga0.55N contact layer
In this study, we report the application of a p-Al _0.45 Ga _0.55 N contact layer in far ultraviolet-C light-emitting diodes (LEDs) on AlN substrates to enhance wall-plug efficiency (WPE). The LEDs achieved an optical power of 9.3 mW and a voltage of 6.4 V at 100 mA current, corresponding to a 1.7-f...
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IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
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| Online Access: | https://doi.org/10.35848/1882-0786/adbfda |
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| author | Hirotsugu Kobayashi TaeGi Lee Yusuke Okuaki Mitsuhiro Nakayama |
| author_facet | Hirotsugu Kobayashi TaeGi Lee Yusuke Okuaki Mitsuhiro Nakayama |
| author_sort | Hirotsugu Kobayashi |
| collection | DOAJ |
| description | In this study, we report the application of a p-Al _0.45 Ga _0.55 N contact layer in far ultraviolet-C light-emitting diodes (LEDs) on AlN substrates to enhance wall-plug efficiency (WPE). The LEDs achieved an optical power of 9.3 mW and a voltage of 6.4 V at 100 mA current, corresponding to a 1.7-fold improvement in WPE (1.4%) compared to conventional p-GaN-based LEDs. Lifetime tests suggest that this efficiency gain arises from both light extraction and carrier injection. Finally, Hall-effect measurements of bulk Mg-doped Al _0.45 Ga _0.55 N demonstrated low resistivity, small activation energy, and inverted carrier type. |
| format | Article |
| id | doaj-art-27e951f95f4f40dc94dfa205898b16cc |
| institution | DOAJ |
| issn | 1882-0786 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Applied Physics Express |
| spelling | doaj-art-27e951f95f4f40dc94dfa205898b16cc2025-08-20T02:48:28ZengIOP PublishingApplied Physics Express1882-07862025-01-0118303100310.35848/1882-0786/adbfdaImprovement of light extraction and carrier injection in far UV-C LEDs on AlN substrate via conductive p-Al0.45Ga0.55N contact layerHirotsugu Kobayashi0https://orcid.org/0000-0001-6080-3647TaeGi Lee1Yusuke Okuaki2Mitsuhiro Nakayama3Asahi Kasei , Fuji, Shizuoka, 416-8501, JapanAsahi Kasei , Fuji, Shizuoka, 416-8501, JapanAsahi Kasei , Fuji, Shizuoka, 416-8501, JapanAsahi Kasei , Fuji, Shizuoka, 416-8501, JapanIn this study, we report the application of a p-Al _0.45 Ga _0.55 N contact layer in far ultraviolet-C light-emitting diodes (LEDs) on AlN substrates to enhance wall-plug efficiency (WPE). The LEDs achieved an optical power of 9.3 mW and a voltage of 6.4 V at 100 mA current, corresponding to a 1.7-fold improvement in WPE (1.4%) compared to conventional p-GaN-based LEDs. Lifetime tests suggest that this efficiency gain arises from both light extraction and carrier injection. Finally, Hall-effect measurements of bulk Mg-doped Al _0.45 Ga _0.55 N demonstrated low resistivity, small activation energy, and inverted carrier type.https://doi.org/10.35848/1882-0786/adbfdaAlGaNsemiconductorLEDfar UV-Ccrystal growthp-AlGaN |
| spellingShingle | Hirotsugu Kobayashi TaeGi Lee Yusuke Okuaki Mitsuhiro Nakayama Improvement of light extraction and carrier injection in far UV-C LEDs on AlN substrate via conductive p-Al0.45Ga0.55N contact layer Applied Physics Express AlGaN semiconductor LED far UV-C crystal growth p-AlGaN |
| title | Improvement of light extraction and carrier injection in far UV-C LEDs on AlN substrate via conductive p-Al0.45Ga0.55N contact layer |
| title_full | Improvement of light extraction and carrier injection in far UV-C LEDs on AlN substrate via conductive p-Al0.45Ga0.55N contact layer |
| title_fullStr | Improvement of light extraction and carrier injection in far UV-C LEDs on AlN substrate via conductive p-Al0.45Ga0.55N contact layer |
| title_full_unstemmed | Improvement of light extraction and carrier injection in far UV-C LEDs on AlN substrate via conductive p-Al0.45Ga0.55N contact layer |
| title_short | Improvement of light extraction and carrier injection in far UV-C LEDs on AlN substrate via conductive p-Al0.45Ga0.55N contact layer |
| title_sort | improvement of light extraction and carrier injection in far uv c leds on aln substrate via conductive p al0 45ga0 55n contact layer |
| topic | AlGaN semiconductor LED far UV-C crystal growth p-AlGaN |
| url | https://doi.org/10.35848/1882-0786/adbfda |
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