Improvement of light extraction and carrier injection in far UV-C LEDs on AlN substrate via conductive p-Al0.45Ga0.55N contact layer
In this study, we report the application of a p-Al _0.45 Ga _0.55 N contact layer in far ultraviolet-C light-emitting diodes (LEDs) on AlN substrates to enhance wall-plug efficiency (WPE). The LEDs achieved an optical power of 9.3 mW and a voltage of 6.4 V at 100 mA current, corresponding to a 1.7-f...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/adbfda |
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| Summary: | In this study, we report the application of a p-Al _0.45 Ga _0.55 N contact layer in far ultraviolet-C light-emitting diodes (LEDs) on AlN substrates to enhance wall-plug efficiency (WPE). The LEDs achieved an optical power of 9.3 mW and a voltage of 6.4 V at 100 mA current, corresponding to a 1.7-fold improvement in WPE (1.4%) compared to conventional p-GaN-based LEDs. Lifetime tests suggest that this efficiency gain arises from both light extraction and carrier injection. Finally, Hall-effect measurements of bulk Mg-doped Al _0.45 Ga _0.55 N demonstrated low resistivity, small activation energy, and inverted carrier type. |
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| ISSN: | 1882-0786 |