Interface-controlled uniaxial in-plane ferroelectricity in Hf0.5Zr0.5O2(100) epitaxial thin films

Abstract Hafnium oxide-based ferroelectric thin films are widely recognized as a CMOS-compatible and highly scalable material platform for next-generation non-volatile memory and logic devices. While out-of-plane ferroelectricity in hafnium oxide films has been intensively investigated and utilized...

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Bibliographic Details
Main Authors:	Kai Liu, Feng Jin, Tianyuan Zhu, Jie Fang, Xingchang Zhang, Erhao Peng, Kuan Liu, Qiming Lv, Kunjie Dai, Yajun Tao, Jingdi Lu, Haoliang Huang, Jiachen Li, Shouzhe Dong, Shengchun Shen, Yuewei Yin, Houbing Huang, Zhenlin Luo, Chao Ma, Shi Liu, Lingfei Wang, Wenbin Wu
Format:	Article
Language:	English
Published:	Nature Portfolio 2025-08-01
Series:	Nature Communications
Online Access:	https://doi.org/10.1038/s41467-025-62610-3
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Interface-controlled uniaxial in-plane ferroelectricity in Hf0.5Zr0.5O2(100) epitaxial thin films

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