Nano-Micro Structure of Metal Oxide Semiconductors for Triethylamine Sensors: ZnO and In<sub>2</sub>O<sub>3</sub>

Toxic and harmful gases, particularly volatile organic compounds like triethylamine, pose significant risks to human health and the environment. As a result, metal oxide semiconductor (MOS) sensors have been widely utilized in various fields, including medical diagnostics, environmental monitoring,...

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Main Authors: Yongbo Fan, Lixin Song, Weijia Wang, Huiqing Fan
Format: Article
Language:English
Published: MDPI AG 2025-03-01
Series:Nanomaterials
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Online Access:https://www.mdpi.com/2079-4991/15/6/427
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_version_ 1849341972028850176
author Yongbo Fan
Lixin Song
Weijia Wang
Huiqing Fan
author_facet Yongbo Fan
Lixin Song
Weijia Wang
Huiqing Fan
author_sort Yongbo Fan
collection DOAJ
description Toxic and harmful gases, particularly volatile organic compounds like triethylamine, pose significant risks to human health and the environment. As a result, metal oxide semiconductor (MOS) sensors have been widely utilized in various fields, including medical diagnostics, environmental monitoring, food processing, and chemical production. Extensive research has been conducted worldwide to enhance the gas-sensing performance of MOS materials. However, traditional MOS materials suffer from limitations such as a small specific surface area and a low density of active sites, leading to poor gas sensing properties—characterized by low sensitivity and selectivity, high detection limits and operating temperatures, as well as long response and recovery times. To address these challenges in triethylamine detection, this paper reviews the synthesis of nano-microspheres, porous micro-octahedra, and hollow prism-like nanoflowers via chemical solution methods. The triethylamine sensing performance of MOS materials, such as ZnO and In<sub>2</sub>O<sub>3</sub>, can be significantly enhanced through nano-morphology control, electronic band engineering, and noble metal loading. Additionally, strategies, including elemental doping, oxygen vacancy modulation, and structural morphology optimization, have been employed to achieve ultra-high sensitivity in triethylamine detection. This review further explores the underlying mechanisms responsible for the improved gas sensitivity. Finally, perspectives on future research directions in triethylamine gas sensing are provided.
format Article
id doaj-art-26e6a7cae4ee479b854ca37a3642bf7c
institution Kabale University
issn 2079-4991
language English
publishDate 2025-03-01
publisher MDPI AG
record_format Article
series Nanomaterials
spelling doaj-art-26e6a7cae4ee479b854ca37a3642bf7c2025-08-20T03:43:31ZengMDPI AGNanomaterials2079-49912025-03-0115642710.3390/nano15060427Nano-Micro Structure of Metal Oxide Semiconductors for Triethylamine Sensors: ZnO and In<sub>2</sub>O<sub>3</sub>Yongbo Fan0Lixin Song1Weijia Wang2Huiqing Fan3Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong 100872, ChinaState Key Laboratory of Solidiffcation Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072, ChinaState Key Laboratory of Solidiffcation Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072, ChinaState Key Laboratory of Solidiffcation Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072, ChinaToxic and harmful gases, particularly volatile organic compounds like triethylamine, pose significant risks to human health and the environment. As a result, metal oxide semiconductor (MOS) sensors have been widely utilized in various fields, including medical diagnostics, environmental monitoring, food processing, and chemical production. Extensive research has been conducted worldwide to enhance the gas-sensing performance of MOS materials. However, traditional MOS materials suffer from limitations such as a small specific surface area and a low density of active sites, leading to poor gas sensing properties—characterized by low sensitivity and selectivity, high detection limits and operating temperatures, as well as long response and recovery times. To address these challenges in triethylamine detection, this paper reviews the synthesis of nano-microspheres, porous micro-octahedra, and hollow prism-like nanoflowers via chemical solution methods. The triethylamine sensing performance of MOS materials, such as ZnO and In<sub>2</sub>O<sub>3</sub>, can be significantly enhanced through nano-morphology control, electronic band engineering, and noble metal loading. Additionally, strategies, including elemental doping, oxygen vacancy modulation, and structural morphology optimization, have been employed to achieve ultra-high sensitivity in triethylamine detection. This review further explores the underlying mechanisms responsible for the improved gas sensitivity. Finally, perspectives on future research directions in triethylamine gas sensing are provided.https://www.mdpi.com/2079-4991/15/6/427gas sensormetal oxide semiconductorstriethylaminenano-micro structuremorphologyelectron depletion layer
spellingShingle Yongbo Fan
Lixin Song
Weijia Wang
Huiqing Fan
Nano-Micro Structure of Metal Oxide Semiconductors for Triethylamine Sensors: ZnO and In<sub>2</sub>O<sub>3</sub>
Nanomaterials
gas sensor
metal oxide semiconductors
triethylamine
nano-micro structure
morphology
electron depletion layer
title Nano-Micro Structure of Metal Oxide Semiconductors for Triethylamine Sensors: ZnO and In<sub>2</sub>O<sub>3</sub>
title_full Nano-Micro Structure of Metal Oxide Semiconductors for Triethylamine Sensors: ZnO and In<sub>2</sub>O<sub>3</sub>
title_fullStr Nano-Micro Structure of Metal Oxide Semiconductors for Triethylamine Sensors: ZnO and In<sub>2</sub>O<sub>3</sub>
title_full_unstemmed Nano-Micro Structure of Metal Oxide Semiconductors for Triethylamine Sensors: ZnO and In<sub>2</sub>O<sub>3</sub>
title_short Nano-Micro Structure of Metal Oxide Semiconductors for Triethylamine Sensors: ZnO and In<sub>2</sub>O<sub>3</sub>
title_sort nano micro structure of metal oxide semiconductors for triethylamine sensors zno and in sub 2 sub o sub 3 sub
topic gas sensor
metal oxide semiconductors
triethylamine
nano-micro structure
morphology
electron depletion layer
url https://www.mdpi.com/2079-4991/15/6/427
work_keys_str_mv AT yongbofan nanomicrostructureofmetaloxidesemiconductorsfortriethylaminesensorsznoandinsub2subosub3sub
AT lixinsong nanomicrostructureofmetaloxidesemiconductorsfortriethylaminesensorsznoandinsub2subosub3sub
AT weijiawang nanomicrostructureofmetaloxidesemiconductorsfortriethylaminesensorsznoandinsub2subosub3sub
AT huiqingfan nanomicrostructureofmetaloxidesemiconductorsfortriethylaminesensorsznoandinsub2subosub3sub