Valency-Based Descriptors for Silicon Carbides, Bismuth(III) Iodide, and Dendrimers in Drug Applications
Silicon carbide (SiC), also called carborundum, is a semiconductor containing silicon and carbon. Dendrimers are repetitively branched molecules that are typically symmetric around the core and often adopt a spherical three-dimensional morphology. Bismuth(III) iodide is an inorganic compound with th...
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| Format: | Article |
| Language: | English |
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Wiley
2020-01-01
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| Series: | Journal of Chemistry |
| Online Access: | http://dx.doi.org/10.1155/2020/8616309 |
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| author | Qi-Zhao Li Abaid ur Rehman Virk Kashif Nazar Imran Ahmed Iskander Tlili |
| author_facet | Qi-Zhao Li Abaid ur Rehman Virk Kashif Nazar Imran Ahmed Iskander Tlili |
| author_sort | Qi-Zhao Li |
| collection | DOAJ |
| description | Silicon carbide (SiC), also called carborundum, is a semiconductor containing silicon and carbon. Dendrimers are repetitively branched molecules that are typically symmetric around the core and often adopt a spherical three-dimensional morphology. Bismuth(III) iodide is an inorganic compound with the formula BiI3. This gray-black solid is the product of the reaction between bismuth and iodine, which once was of interest in qualitative inorganic analysis. In chemical graph theory, we associate a graph to a compound and compute topological indices that help us in guessing properties of the understudy compound. A topological index is the graph invariant number, calculated from a graph representing a molecule. Most of the proposed topological indices are related either to a vertex adjacency relationship (atom-atom connectivity) in the graph or to topological distances in the graph. In this paper, we aim to compute the first and second Gourava indices and hyper-Gourava indices for silicon carbides, bismuth(III) iodide, and dendrimers. |
| format | Article |
| id | doaj-art-26255581e120408196890e285cb26d75 |
| institution | Kabale University |
| issn | 2090-9063 2090-9071 |
| language | English |
| publishDate | 2020-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Journal of Chemistry |
| spelling | doaj-art-26255581e120408196890e285cb26d752025-02-03T05:49:32ZengWileyJournal of Chemistry2090-90632090-90712020-01-01202010.1155/2020/86163098616309Valency-Based Descriptors for Silicon Carbides, Bismuth(III) Iodide, and Dendrimers in Drug ApplicationsQi-Zhao Li0Abaid ur Rehman Virk1Kashif Nazar2Imran Ahmed3Iskander Tlili4School of Pharmacy, Anhui Xinhua University, Hefei 230088, ChinaDepartment of Mathematics, University of Management and Technology, Lahore 54000, PakistanDepartment of Mathematics, COMSATS University of Islamabad, Lahore Campus, Lahore 54000, PakistanDepartment of Mathematics, COMSATS University of Islamabad, Lahore Campus, Lahore 54000, PakistanDepartment for Management of Science and Technology Development, Ton Duc Thang University, Ho Chi Minh City, VietnamSilicon carbide (SiC), also called carborundum, is a semiconductor containing silicon and carbon. Dendrimers are repetitively branched molecules that are typically symmetric around the core and often adopt a spherical three-dimensional morphology. Bismuth(III) iodide is an inorganic compound with the formula BiI3. This gray-black solid is the product of the reaction between bismuth and iodine, which once was of interest in qualitative inorganic analysis. In chemical graph theory, we associate a graph to a compound and compute topological indices that help us in guessing properties of the understudy compound. A topological index is the graph invariant number, calculated from a graph representing a molecule. Most of the proposed topological indices are related either to a vertex adjacency relationship (atom-atom connectivity) in the graph or to topological distances in the graph. In this paper, we aim to compute the first and second Gourava indices and hyper-Gourava indices for silicon carbides, bismuth(III) iodide, and dendrimers.http://dx.doi.org/10.1155/2020/8616309 |
| spellingShingle | Qi-Zhao Li Abaid ur Rehman Virk Kashif Nazar Imran Ahmed Iskander Tlili Valency-Based Descriptors for Silicon Carbides, Bismuth(III) Iodide, and Dendrimers in Drug Applications Journal of Chemistry |
| title | Valency-Based Descriptors for Silicon Carbides, Bismuth(III) Iodide, and Dendrimers in Drug Applications |
| title_full | Valency-Based Descriptors for Silicon Carbides, Bismuth(III) Iodide, and Dendrimers in Drug Applications |
| title_fullStr | Valency-Based Descriptors for Silicon Carbides, Bismuth(III) Iodide, and Dendrimers in Drug Applications |
| title_full_unstemmed | Valency-Based Descriptors for Silicon Carbides, Bismuth(III) Iodide, and Dendrimers in Drug Applications |
| title_short | Valency-Based Descriptors for Silicon Carbides, Bismuth(III) Iodide, and Dendrimers in Drug Applications |
| title_sort | valency based descriptors for silicon carbides bismuth iii iodide and dendrimers in drug applications |
| url | http://dx.doi.org/10.1155/2020/8616309 |
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