Valency-Based Descriptors for Silicon Carbides, Bismuth(III) Iodide, and Dendrimers in Drug Applications
Silicon carbide (SiC), also called carborundum, is a semiconductor containing silicon and carbon. Dendrimers are repetitively branched molecules that are typically symmetric around the core and often adopt a spherical three-dimensional morphology. Bismuth(III) iodide is an inorganic compound with th...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2020-01-01
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| Series: | Journal of Chemistry |
| Online Access: | http://dx.doi.org/10.1155/2020/8616309 |
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| Summary: | Silicon carbide (SiC), also called carborundum, is a semiconductor containing silicon and carbon. Dendrimers are repetitively branched molecules that are typically symmetric around the core and often adopt a spherical three-dimensional morphology. Bismuth(III) iodide is an inorganic compound with the formula BiI3. This gray-black solid is the product of the reaction between bismuth and iodine, which once was of interest in qualitative inorganic analysis. In chemical graph theory, we associate a graph to a compound and compute topological indices that help us in guessing properties of the understudy compound. A topological index is the graph invariant number, calculated from a graph representing a molecule. Most of the proposed topological indices are related either to a vertex adjacency relationship (atom-atom connectivity) in the graph or to topological distances in the graph. In this paper, we aim to compute the first and second Gourava indices and hyper-Gourava indices for silicon carbides, bismuth(III) iodide, and dendrimers. |
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| ISSN: | 2090-9063 2090-9071 |