Effect of Rapid Thermal Annealing on the Characteristics of Micro Zn-Doped Ga<sub>2</sub>O<sub>3</sub> Films by Using Mixed Atomic Layer Deposition
In this work, micro Zn-doped Ga<sub>2</sub>O<sub>3</sub> films (GZO) were deposited by one-step mixed atomic layer deposition (ALD) followed by post-thermal engineering. The effects of Zn doping and post-annealing temperature on both structure characteristics and electric pro...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-03-01
|
| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/15/7/499 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | In this work, micro Zn-doped Ga<sub>2</sub>O<sub>3</sub> films (GZO) were deposited by one-step mixed atomic layer deposition (ALD) followed by post-thermal engineering. The effects of Zn doping and post-annealing temperature on both structure characteristics and electric properties were investigated in detail. The combination of plasma-enhanced ALD of Ga<sub>2</sub>O<sub>3</sub> and thermal ALD of ZnO can realize the fast growth rate (0.62 nm/supercyc.), high density (4.9 g/cm<sup>3</sup>), and smooth interface (average R<sub>q</sub> = 0.51 nm) of Zn-doped Ga<sub>2</sub>O<sub>3</sub> film. In addition, the thermal engineering of the GZO was achieved by setting the annealing temperature to 400, 600, 800, and 1000 °C, respectively. The GZO film annealed at 800 °C exhibits a typical crystalline structure (Ga<sub>2</sub>O<sub>3</sub>: β phase, ZnO: hexagonal wurtzite), a lower roughness (average R<sub>q</sub> = 2.7 nm), and a higher average breakdown field (16.47 MV/cm). Notably, compared with the pure GZO film, the breakdown field annealed at 800 °C increases by 180%. The O<sub>V</sub> content in the GZO after annealing at 800 °C is as low as 34.8%, resulting in a remarkable enhancement of electrical properties. These research findings offer a new perspective on the high-quality ALD-doped materials and application of GZO in high-power electronics and high-sensitive devices. |
|---|---|
| ISSN: | 2079-4991 |