Quantitative Defect Analysis in CVD‐Grown Monolayer MoS2 via In‐Plane Raman Vibration
ABSTRACT The synthesis of two‐dimensional transition metal dichalcogenide (2D‐TMD) materials gives rise to inherent defects, specifically chalcogen vacancies, due to thermodynamic equilibrium. Techniques such as chemical vapor deposition (CVD), metal‐organic chemical vapor deposition (MOCVD), atomic...
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Wiley-VCH
2025-04-01
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| Series: | Nano Select |
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| Online Access: | https://doi.org/10.1002/nano.202400103 |
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| author | Moha Feroz Hossen Sachin Shendokar Md. Arifur Rahman Khan Shyam Aravamudhan |
| author_facet | Moha Feroz Hossen Sachin Shendokar Md. Arifur Rahman Khan Shyam Aravamudhan |
| author_sort | Moha Feroz Hossen |
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| description | ABSTRACT The synthesis of two‐dimensional transition metal dichalcogenide (2D‐TMD) materials gives rise to inherent defects, specifically chalcogen vacancies, due to thermodynamic equilibrium. Techniques such as chemical vapor deposition (CVD), metal‐organic chemical vapor deposition (MOCVD), atomic layer deposition (ALD), flux growth method, and mechanical exfoliation produce large‐scale, uniform 2D TMD films, either in bulk or monolayers. However, defects on the film surface impact its quality, and it is necessary to measure defect density. The phonon confinement model indicates that the first‐order Raman band frequency shift depends on defect density. Monolayer Molybdenum disulfide (MoS2) exhibits three phonon dispersions at the Brillouin zone edge (M point): out‐of‐plane optical phonon vibration (ZO), in‐plane longitudinal optical phonon vibration (LO), and in‐plane transverse optical phonon vibration (TO). The LO and ZO modes overlap with Raman in‐plane vibration (𝐸12g) and Raman out‐of‐plane vibration (𝐴1g), respectively, causing peak broadening. In the presence of defects, the Raman 𝐸12g vibration energy decreases due to a reduced restoring force constant. The Raman 𝐴1g vibration trend is random, influenced by both restoring force constant and mass. The study introduces a quantitative defect measurement technique for CVD‐grown monolayer MoS2 using Raman 𝐸12g mode, employing sequential data processing algorithms to reveal defect density on the film surface. |
| format | Article |
| id | doaj-art-25af61ba4d624f24902f64315d296c78 |
| institution | DOAJ |
| issn | 2688-4011 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Wiley-VCH |
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| series | Nano Select |
| spelling | doaj-art-25af61ba4d624f24902f64315d296c782025-08-20T03:17:13ZengWiley-VCHNano Select2688-40112025-04-0164n/an/a10.1002/nano.202400103Quantitative Defect Analysis in CVD‐Grown Monolayer MoS2 via In‐Plane Raman VibrationMoha Feroz Hossen0Sachin Shendokar1Md. Arifur Rahman Khan2Shyam Aravamudhan3Department of Nanoengineering North Carolina Agricultural and Technical State University Greensboro North Carolina USADepartment of Nanoengineering North Carolina Agricultural and Technical State University Greensboro North Carolina USADepartment of Nanoscience University of North Carolina at Greensboro Greensboro North Carolina USADepartment of Nanoengineering North Carolina Agricultural and Technical State University Greensboro North Carolina USAABSTRACT The synthesis of two‐dimensional transition metal dichalcogenide (2D‐TMD) materials gives rise to inherent defects, specifically chalcogen vacancies, due to thermodynamic equilibrium. Techniques such as chemical vapor deposition (CVD), metal‐organic chemical vapor deposition (MOCVD), atomic layer deposition (ALD), flux growth method, and mechanical exfoliation produce large‐scale, uniform 2D TMD films, either in bulk or monolayers. However, defects on the film surface impact its quality, and it is necessary to measure defect density. The phonon confinement model indicates that the first‐order Raman band frequency shift depends on defect density. Monolayer Molybdenum disulfide (MoS2) exhibits three phonon dispersions at the Brillouin zone edge (M point): out‐of‐plane optical phonon vibration (ZO), in‐plane longitudinal optical phonon vibration (LO), and in‐plane transverse optical phonon vibration (TO). The LO and ZO modes overlap with Raman in‐plane vibration (𝐸12g) and Raman out‐of‐plane vibration (𝐴1g), respectively, causing peak broadening. In the presence of defects, the Raman 𝐸12g vibration energy decreases due to a reduced restoring force constant. The Raman 𝐴1g vibration trend is random, influenced by both restoring force constant and mass. The study introduces a quantitative defect measurement technique for CVD‐grown monolayer MoS2 using Raman 𝐸12g mode, employing sequential data processing algorithms to reveal defect density on the film surface.https://doi.org/10.1002/nano.202400103chemical vapor depositionin‐plane vibrationmonolayer molybdenum disulfidephotoluminescencepoint defectsRaman spectroscopy |
| spellingShingle | Moha Feroz Hossen Sachin Shendokar Md. Arifur Rahman Khan Shyam Aravamudhan Quantitative Defect Analysis in CVD‐Grown Monolayer MoS2 via In‐Plane Raman Vibration Nano Select chemical vapor deposition in‐plane vibration monolayer molybdenum disulfide photoluminescence point defects Raman spectroscopy |
| title | Quantitative Defect Analysis in CVD‐Grown Monolayer MoS2 via In‐Plane Raman Vibration |
| title_full | Quantitative Defect Analysis in CVD‐Grown Monolayer MoS2 via In‐Plane Raman Vibration |
| title_fullStr | Quantitative Defect Analysis in CVD‐Grown Monolayer MoS2 via In‐Plane Raman Vibration |
| title_full_unstemmed | Quantitative Defect Analysis in CVD‐Grown Monolayer MoS2 via In‐Plane Raman Vibration |
| title_short | Quantitative Defect Analysis in CVD‐Grown Monolayer MoS2 via In‐Plane Raman Vibration |
| title_sort | quantitative defect analysis in cvd grown monolayer mos2 via in plane raman vibration |
| topic | chemical vapor deposition in‐plane vibration monolayer molybdenum disulfide photoluminescence point defects Raman spectroscopy |
| url | https://doi.org/10.1002/nano.202400103 |
| work_keys_str_mv | AT mohaferozhossen quantitativedefectanalysisincvdgrownmonolayermos2viainplaneramanvibration AT sachinshendokar quantitativedefectanalysisincvdgrownmonolayermos2viainplaneramanvibration AT mdarifurrahmankhan quantitativedefectanalysisincvdgrownmonolayermos2viainplaneramanvibration AT shyamaravamudhan quantitativedefectanalysisincvdgrownmonolayermos2viainplaneramanvibration |