VOx‐Based Non‐Volatile Radio‐Frequency Switches for Reconfigurable Filter
Abstract Vanadium oxide (VOx) based memristor is a promising candidate for next‐generation non‐volatile memory and radio‐frequency (RF) switches due to its compatibility with wafer‐level integration and high‐frequency operation. This work demonstrates high‐performance VOx memristor with gold and sil...
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| Format: | Article |
| Language: | English |
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Wiley
2025-08-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202501989 |
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| author | Dabin Seo Dahyeon Kim Jiyeon Ryu Changwoo Pyo Seungchan Lee Tae‐Sik Yoon Myungsoo Kim |
| author_facet | Dabin Seo Dahyeon Kim Jiyeon Ryu Changwoo Pyo Seungchan Lee Tae‐Sik Yoon Myungsoo Kim |
| author_sort | Dabin Seo |
| collection | DOAJ |
| description | Abstract Vanadium oxide (VOx) based memristor is a promising candidate for next‐generation non‐volatile memory and radio‐frequency (RF) switches due to its compatibility with wafer‐level integration and high‐frequency operation. This work demonstrates high‐performance VOx memristor with gold and silver electrodes, achieving a higher cutoff frequency compared to previously reported VOx devices. The devices exhibit long retention, high endurance (≈103 cycles), and nanosecond switching speeds, enabling the fabrication of RF switches with a cutoff frequency of ≈4.5 THz, low insertion loss (< 0.46 dB), and high isolation (>20 dB) from 0.1 to 20 GHz with stable operation extended to frequency up to 67 GHz. Leveraging these switches, a reconfigurable X‐band bandpass filter whose is realized center frequency is tuned from 8.2 GHz in the OFF state to 7.6 GHz in the ON state, achieving a tunable range of ≈600 MHz. This demonstration paves the way for compact and versatile RF front‐ends with improved frequency agility in advanced communication systems. |
| format | Article |
| id | doaj-art-25a2307196da45ef9af07f5029a4e804 |
| institution | Kabale University |
| issn | 2198-3844 |
| language | English |
| publishDate | 2025-08-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj-art-25a2307196da45ef9af07f5029a4e8042025-08-23T14:00:55ZengWileyAdvanced Science2198-38442025-08-011231n/an/a10.1002/advs.202501989VOx‐Based Non‐Volatile Radio‐Frequency Switches for Reconfigurable FilterDabin Seo0Dahyeon Kim1Jiyeon Ryu2Changwoo Pyo3Seungchan Lee4Tae‐Sik Yoon5Myungsoo Kim6Graduate School of Semiconductor Materials and Devices Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 South KoreaDepartment of Electrical Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 South KoreaGraduate School of Semiconductor Materials and Devices Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 South KoreaGraduate School of Semiconductor Materials and Devices Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 South KoreaDepartment of Electrical Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 South KoreaGraduate School of Semiconductor Materials and Devices Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 South KoreaGraduate School of Semiconductor Materials and Devices Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 South KoreaAbstract Vanadium oxide (VOx) based memristor is a promising candidate for next‐generation non‐volatile memory and radio‐frequency (RF) switches due to its compatibility with wafer‐level integration and high‐frequency operation. This work demonstrates high‐performance VOx memristor with gold and silver electrodes, achieving a higher cutoff frequency compared to previously reported VOx devices. The devices exhibit long retention, high endurance (≈103 cycles), and nanosecond switching speeds, enabling the fabrication of RF switches with a cutoff frequency of ≈4.5 THz, low insertion loss (< 0.46 dB), and high isolation (>20 dB) from 0.1 to 20 GHz with stable operation extended to frequency up to 67 GHz. Leveraging these switches, a reconfigurable X‐band bandpass filter whose is realized center frequency is tuned from 8.2 GHz in the OFF state to 7.6 GHz in the ON state, achieving a tunable range of ≈600 MHz. This demonstration paves the way for compact and versatile RF front‐ends with improved frequency agility in advanced communication systems.https://doi.org/10.1002/advs.2025019895G/6G communicationnon‐volatile memoryradio‐frequency switchreconfigurable filtervanadium oxide |
| spellingShingle | Dabin Seo Dahyeon Kim Jiyeon Ryu Changwoo Pyo Seungchan Lee Tae‐Sik Yoon Myungsoo Kim VOx‐Based Non‐Volatile Radio‐Frequency Switches for Reconfigurable Filter Advanced Science 5G/6G communication non‐volatile memory radio‐frequency switch reconfigurable filter vanadium oxide |
| title | VOx‐Based Non‐Volatile Radio‐Frequency Switches for Reconfigurable Filter |
| title_full | VOx‐Based Non‐Volatile Radio‐Frequency Switches for Reconfigurable Filter |
| title_fullStr | VOx‐Based Non‐Volatile Radio‐Frequency Switches for Reconfigurable Filter |
| title_full_unstemmed | VOx‐Based Non‐Volatile Radio‐Frequency Switches for Reconfigurable Filter |
| title_short | VOx‐Based Non‐Volatile Radio‐Frequency Switches for Reconfigurable Filter |
| title_sort | vox based non volatile radio frequency switches for reconfigurable filter |
| topic | 5G/6G communication non‐volatile memory radio‐frequency switch reconfigurable filter vanadium oxide |
| url | https://doi.org/10.1002/advs.202501989 |
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