Investigation of thermal-mechanical performance of dual-chip SiC power devices based on Cu clip interconnection

Traditional packaging structures of power semiconductor device use aluminum (Al) wire for bonding. This leads to high parasitic inductance and reliability issues, limiting the development of silicon carbide (SiC) power devices. Researchers have proposed a new copper clip interconnection process that...

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Bibliographic Details
Main Authors: LIAO Linjie, FAN Yi, MEI Xiaoyang, WANG Liancheng
Format: Article
Language:zho
Published: Editorial Department of Electric Drive for Locomotives 2023-09-01
Series:机车电传动
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Online Access:http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128X.2023.05.010
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