Photoelastic Refractive Index Changes in GaAs Investigated by Finite Element Method (FEM) Simulations
Changes in the refractive indices of a GaAs laser chip owing to bonding strain are investigated by two-dimensional (2D) and three-dimensional (3D) finite element method (FEM) simulations. The strain induced by die attach (i.e., the bonding strain) was estimated by fitting simulations to the measured...
Saved in:
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-05-01
|
| Series: | Optics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2673-3269/6/2/21 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849425170256625664 |
|---|---|
| author | Daniel T. Cassidy |
| author_facet | Daniel T. Cassidy |
| author_sort | Daniel T. Cassidy |
| collection | DOAJ |
| description | Changes in the refractive indices of a GaAs laser chip owing to bonding strain are investigated by two-dimensional (2D) and three-dimensional (3D) finite element method (FEM) simulations. The strain induced by die attach (i.e., the bonding strain) was estimated by fitting simulations to the measured degree of polarisation (DOP) of photoluminescence from the facet of the bonded chip. Changes in the refractive indices were estimated using the strains obtained from fits to DOP data. Differences between the 2D and 3D FEM estimations of the deformation and of the photo-elastic effect are noted. It is recommended that 2D FEM simulations be used as starting points for 3D FEM simulations. Elastic constants for GaAs in plane-of-the-facet coordinate systems for 2D (plane stress and plane strain) and 3D FEM simulations are given. |
| format | Article |
| id | doaj-art-2547aa4dab104f5e9e99e59b05471bf2 |
| institution | Kabale University |
| issn | 2673-3269 |
| language | English |
| publishDate | 2025-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Optics |
| spelling | doaj-art-2547aa4dab104f5e9e99e59b05471bf22025-08-20T03:29:51ZengMDPI AGOptics2673-32692025-05-01622110.3390/opt6020021Photoelastic Refractive Index Changes in GaAs Investigated by Finite Element Method (FEM) SimulationsDaniel T. Cassidy0Department of Engineering Physics, Faculty of Engineering, McMaster University, Hamilton, ON L8S 4L7, CanadaChanges in the refractive indices of a GaAs laser chip owing to bonding strain are investigated by two-dimensional (2D) and three-dimensional (3D) finite element method (FEM) simulations. The strain induced by die attach (i.e., the bonding strain) was estimated by fitting simulations to the measured degree of polarisation (DOP) of photoluminescence from the facet of the bonded chip. Changes in the refractive indices were estimated using the strains obtained from fits to DOP data. Differences between the 2D and 3D FEM estimations of the deformation and of the photo-elastic effect are noted. It is recommended that 2D FEM simulations be used as starting points for 3D FEM simulations. Elastic constants for GaAs in plane-of-the-facet coordinate systems for 2D (plane stress and plane strain) and 3D FEM simulations are given.https://www.mdpi.com/2673-3269/6/2/21degree of polarisationphotoelasticGaAsFEM simulationsstraindie attach |
| spellingShingle | Daniel T. Cassidy Photoelastic Refractive Index Changes in GaAs Investigated by Finite Element Method (FEM) Simulations Optics degree of polarisation photoelastic GaAs FEM simulations strain die attach |
| title | Photoelastic Refractive Index Changes in GaAs Investigated by Finite Element Method (FEM) Simulations |
| title_full | Photoelastic Refractive Index Changes in GaAs Investigated by Finite Element Method (FEM) Simulations |
| title_fullStr | Photoelastic Refractive Index Changes in GaAs Investigated by Finite Element Method (FEM) Simulations |
| title_full_unstemmed | Photoelastic Refractive Index Changes in GaAs Investigated by Finite Element Method (FEM) Simulations |
| title_short | Photoelastic Refractive Index Changes in GaAs Investigated by Finite Element Method (FEM) Simulations |
| title_sort | photoelastic refractive index changes in gaas investigated by finite element method fem simulations |
| topic | degree of polarisation photoelastic GaAs FEM simulations strain die attach |
| url | https://www.mdpi.com/2673-3269/6/2/21 |
| work_keys_str_mv | AT danieltcassidy photoelasticrefractiveindexchangesingaasinvestigatedbyfiniteelementmethodfemsimulations |