Isothermal and Two-Temperature Zone Selenization of Mo Layers
Glass/Mo, Mo foil, glass/Mo/In, and glass/Mo/Cu stacked layers were selenized in closed vacuum tubes by isothermal and/or two-temperature zone annealing in Se vapors. The selenization process was studied dependent on Se vapor pressure, temperature and time. Samples were selenized from 375 to 580°C f...
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| Format: | Article |
| Language: | English |
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Wiley
2012-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2012/345762 |
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| author | L. Kaupmees M. Altosaar O. Volobujeva T. Raadik M. Grossberg M. Danilson E. Mellikov P. Barvinschi |
| author_facet | L. Kaupmees M. Altosaar O. Volobujeva T. Raadik M. Grossberg M. Danilson E. Mellikov P. Barvinschi |
| author_sort | L. Kaupmees |
| collection | DOAJ |
| description | Glass/Mo, Mo foil, glass/Mo/In, and glass/Mo/Cu stacked layers were selenized in closed vacuum tubes by isothermal and/or two-temperature zone annealing in Se vapors. The selenization process was studied dependent on Se vapor pressure, temperature and time. Samples were selenized from 375 to 580°C for 30 and 60 minutes. The applied Se pressure was varied between 130 and 4.4⋅103 Pa. The increase of MoSe2 film thickness was found to depend on the origin of Mo. MoSe2 thickness dL on Mo-foil was much higher than on sputtered Mo layers, and it depended linearly on time and as a power function dL~PSe1/2 on Se vapor pressure. The residual oxygen content in the formed MoSe2 layers was much lower in the two-zone selenization process. If Mo was covered with Cu or In before selenization, these were found to diffuse into formed MoSe2 layer. All the MoSe2 layers showed p-type conductivity. |
| format | Article |
| id | doaj-art-25463cd3ab0344b897c288b57b859852 |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2012-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-25463cd3ab0344b897c288b57b8598522025-08-20T03:54:52ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422012-01-01201210.1155/2012/345762345762Isothermal and Two-Temperature Zone Selenization of Mo LayersL. Kaupmees0M. Altosaar1O. Volobujeva2T. Raadik3M. Grossberg4M. Danilson5E. Mellikov6P. Barvinschi7Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn, EstoniaDepartment of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn, EstoniaDepartment of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn, EstoniaDepartment of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn, EstoniaDepartment of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn, EstoniaDepartment of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn, EstoniaDepartment of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn, EstoniaFaculty of Physics, West University of Timisoara, B V. Boulovard Parvan 4, 300223 Timisoara, RomaniaGlass/Mo, Mo foil, glass/Mo/In, and glass/Mo/Cu stacked layers were selenized in closed vacuum tubes by isothermal and/or two-temperature zone annealing in Se vapors. The selenization process was studied dependent on Se vapor pressure, temperature and time. Samples were selenized from 375 to 580°C for 30 and 60 minutes. The applied Se pressure was varied between 130 and 4.4⋅103 Pa. The increase of MoSe2 film thickness was found to depend on the origin of Mo. MoSe2 thickness dL on Mo-foil was much higher than on sputtered Mo layers, and it depended linearly on time and as a power function dL~PSe1/2 on Se vapor pressure. The residual oxygen content in the formed MoSe2 layers was much lower in the two-zone selenization process. If Mo was covered with Cu or In before selenization, these were found to diffuse into formed MoSe2 layer. All the MoSe2 layers showed p-type conductivity.http://dx.doi.org/10.1155/2012/345762 |
| spellingShingle | L. Kaupmees M. Altosaar O. Volobujeva T. Raadik M. Grossberg M. Danilson E. Mellikov P. Barvinschi Isothermal and Two-Temperature Zone Selenization of Mo Layers Advances in Materials Science and Engineering |
| title | Isothermal and Two-Temperature Zone Selenization of Mo Layers |
| title_full | Isothermal and Two-Temperature Zone Selenization of Mo Layers |
| title_fullStr | Isothermal and Two-Temperature Zone Selenization of Mo Layers |
| title_full_unstemmed | Isothermal and Two-Temperature Zone Selenization of Mo Layers |
| title_short | Isothermal and Two-Temperature Zone Selenization of Mo Layers |
| title_sort | isothermal and two temperature zone selenization of mo layers |
| url | http://dx.doi.org/10.1155/2012/345762 |
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