Unipolar Barrier Photodetectors Based on Van Der Waals Heterostructure with Ultra‐High Light On/Off Ratio and Fast Speed
Abstract Unipolar barrier architecture is designed to enhance the photodetector's sensitivity by inducing highly asymmetrical barriers, a higher barrier for blocking majority carriers to depressing dark current, and a low minority carrier barrier without impeding the photocurrent flow through t...
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| Format: | Article |
| Language: | English |
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Wiley
2025-02-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202413844 |
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| author | Suofu Wang Xiuxiu Wang Wenhui Wang Tao Han Feng Li Lei Shan Mingsheng Long |
| author_facet | Suofu Wang Xiuxiu Wang Wenhui Wang Tao Han Feng Li Lei Shan Mingsheng Long |
| author_sort | Suofu Wang |
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| description | Abstract Unipolar barrier architecture is designed to enhance the photodetector's sensitivity by inducing highly asymmetrical barriers, a higher barrier for blocking majority carriers to depressing dark current, and a low minority carrier barrier without impeding the photocurrent flow through the channel. Depressed dark current without block photocurrent is highly desired for uncooled Long‐wave infrared (LWIR) photodetection, which can enhance the sensitivity of the photodetector. Here, an excellent unipolar barrier photodetector based on multi‐layer (ML) graphene (G) is developed, WSe2, and PtSe2 (G‐WSe2‐PtSe2) van der Waals (vdW) heterostructure, in which extremely low dark current of 1.61×10−13 A, a record high light on/off ≈109 are demonstrated at 0 V. Notably, the device exhibits ultrafast response speed with rise time τr = 699 ns and decay time τd = 452 ns and high‐power conversion efficiency (η) of 4.87%. The heterostructure demonstrates a broadband photoresponse from 365 nm to LWIR 10.6 µm at room temperature. Notably, the G‐WSe2‐PtSe2 nBn device demonstrates high photoresponsivity (R) of 1.8 AW−1 with 10.6 µm laser at 1 V bias in ambient air. This unipolar barrier device architecture offers an alternative way for highly sensitive free space communication. |
| format | Article |
| id | doaj-art-24ebe3a59729437199ff4a35ca0bfe29 |
| institution | OA Journals |
| issn | 2198-3844 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Wiley |
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| series | Advanced Science |
| spelling | doaj-art-24ebe3a59729437199ff4a35ca0bfe292025-08-20T01:51:48ZengWileyAdvanced Science2198-38442025-02-01128n/an/a10.1002/advs.202413844Unipolar Barrier Photodetectors Based on Van Der Waals Heterostructure with Ultra‐High Light On/Off Ratio and Fast SpeedSuofu Wang0Xiuxiu Wang1Wenhui Wang2Tao Han3Feng Li4Lei Shan5Mingsheng Long6Information Materials and Intelligent Sensing Laboratory of Anhui Province Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education Institutes of Physical Science and Information Technology Anhui University 111 Jiu Long Road Hefei 230601 ChinaInformation Materials and Intelligent Sensing Laboratory of Anhui Province Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education Institutes of Physical Science and Information Technology Anhui University 111 Jiu Long Road Hefei 230601 ChinaSchool of Physics Southeast University Nanjing 211189 ChinaInformation Materials and Intelligent Sensing Laboratory of Anhui Province Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education Institutes of Physical Science and Information Technology Anhui University 111 Jiu Long Road Hefei 230601 ChinaInformation Materials and Intelligent Sensing Laboratory of Anhui Province Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education Institutes of Physical Science and Information Technology Anhui University 111 Jiu Long Road Hefei 230601 ChinaInformation Materials and Intelligent Sensing Laboratory of Anhui Province Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education Institutes of Physical Science and Information Technology Anhui University 111 Jiu Long Road Hefei 230601 ChinaInformation Materials and Intelligent Sensing Laboratory of Anhui Province Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education Institutes of Physical Science and Information Technology Anhui University 111 Jiu Long Road Hefei 230601 ChinaAbstract Unipolar barrier architecture is designed to enhance the photodetector's sensitivity by inducing highly asymmetrical barriers, a higher barrier for blocking majority carriers to depressing dark current, and a low minority carrier barrier without impeding the photocurrent flow through the channel. Depressed dark current without block photocurrent is highly desired for uncooled Long‐wave infrared (LWIR) photodetection, which can enhance the sensitivity of the photodetector. Here, an excellent unipolar barrier photodetector based on multi‐layer (ML) graphene (G) is developed, WSe2, and PtSe2 (G‐WSe2‐PtSe2) van der Waals (vdW) heterostructure, in which extremely low dark current of 1.61×10−13 A, a record high light on/off ≈109 are demonstrated at 0 V. Notably, the device exhibits ultrafast response speed with rise time τr = 699 ns and decay time τd = 452 ns and high‐power conversion efficiency (η) of 4.87%. The heterostructure demonstrates a broadband photoresponse from 365 nm to LWIR 10.6 µm at room temperature. Notably, the G‐WSe2‐PtSe2 nBn device demonstrates high photoresponsivity (R) of 1.8 AW−1 with 10.6 µm laser at 1 V bias in ambient air. This unipolar barrier device architecture offers an alternative way for highly sensitive free space communication.https://doi.org/10.1002/advs.202413844heterostructurelong‐wave infrarednBnphotodetectorptse2 |
| spellingShingle | Suofu Wang Xiuxiu Wang Wenhui Wang Tao Han Feng Li Lei Shan Mingsheng Long Unipolar Barrier Photodetectors Based on Van Der Waals Heterostructure with Ultra‐High Light On/Off Ratio and Fast Speed Advanced Science heterostructure long‐wave infrared nBn photodetector ptse2 |
| title | Unipolar Barrier Photodetectors Based on Van Der Waals Heterostructure with Ultra‐High Light On/Off Ratio and Fast Speed |
| title_full | Unipolar Barrier Photodetectors Based on Van Der Waals Heterostructure with Ultra‐High Light On/Off Ratio and Fast Speed |
| title_fullStr | Unipolar Barrier Photodetectors Based on Van Der Waals Heterostructure with Ultra‐High Light On/Off Ratio and Fast Speed |
| title_full_unstemmed | Unipolar Barrier Photodetectors Based on Van Der Waals Heterostructure with Ultra‐High Light On/Off Ratio and Fast Speed |
| title_short | Unipolar Barrier Photodetectors Based on Van Der Waals Heterostructure with Ultra‐High Light On/Off Ratio and Fast Speed |
| title_sort | unipolar barrier photodetectors based on van der waals heterostructure with ultra high light on off ratio and fast speed |
| topic | heterostructure long‐wave infrared nBn photodetector ptse2 |
| url | https://doi.org/10.1002/advs.202413844 |
| work_keys_str_mv | AT suofuwang unipolarbarrierphotodetectorsbasedonvanderwaalsheterostructurewithultrahighlightonoffratioandfastspeed AT xiuxiuwang unipolarbarrierphotodetectorsbasedonvanderwaalsheterostructurewithultrahighlightonoffratioandfastspeed AT wenhuiwang unipolarbarrierphotodetectorsbasedonvanderwaalsheterostructurewithultrahighlightonoffratioandfastspeed AT taohan unipolarbarrierphotodetectorsbasedonvanderwaalsheterostructurewithultrahighlightonoffratioandfastspeed AT fengli unipolarbarrierphotodetectorsbasedonvanderwaalsheterostructurewithultrahighlightonoffratioandfastspeed AT leishan unipolarbarrierphotodetectorsbasedonvanderwaalsheterostructurewithultrahighlightonoffratioandfastspeed AT mingshenglong unipolarbarrierphotodetectorsbasedonvanderwaalsheterostructurewithultrahighlightonoffratioandfastspeed |