Enhancement of tunnel magnetoresistance in fully perpendicular MnGa-based magnetic tunnel junctions with metastable bcc CoMnFe interlayer
We investigated the tunnel magnetoresistance (TMR) effect in fully perpendicular magnetized MnGa-based magnetic tunnel junctions (MTJs) with CoFeB as the top electrode. In these perpendicular (p)-MTJs, thin metastable body-centered cubic (bcc) CoMnFe alloys are used as an interlayer between the MgO...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/9.0000889 |
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| Summary: | We investigated the tunnel magnetoresistance (TMR) effect in fully perpendicular magnetized MnGa-based magnetic tunnel junctions (MTJs) with CoFeB as the top electrode. In these perpendicular (p)-MTJs, thin metastable body-centered cubic (bcc) CoMnFe alloys are used as an interlayer between the MgO barrier and MnGa layers to enhance the TMR ratio. This study highlights the utility of bcc Co-based alloys, such as CoMnFe, which exhibit antiferromagnetic coupling with MnGa in p-MTJs. The TMR ratios of ∼106% and 110% were observed corresponding to single and double interface p-MTJs, respectively, after annealing at 300 °C, demonstrating the potential of these materials for high-performance spin-transfer torque (STT) devices based on p-MTJs. |
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| ISSN: | 2158-3226 |