Decoupling Volatile and Nonvolatile Response in Reliable Halide Perovskite Memristors
Halide perovskite is very attractive for the fabrication of energy‐efficient memristors for neuromorphic applications. However, reproducibility, stability, and understanding the switching behavior still lag in comparison to other technologies. Herein, a deep‐level understanding of perovskite memrist...
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Wiley-VCH
2025-01-01
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| Series: | Small Structures |
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| Online Access: | https://doi.org/10.1002/sstr.202400380 |
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| author | Naresh‐Kumar Pendyala Cedric Gonzales Antonio Guerrero |
| author_facet | Naresh‐Kumar Pendyala Cedric Gonzales Antonio Guerrero |
| author_sort | Naresh‐Kumar Pendyala |
| collection | DOAJ |
| description | Halide perovskite is very attractive for the fabrication of energy‐efficient memristors for neuromorphic applications. However, reproducibility, stability, and understanding the switching behavior still lag in comparison to other technologies. Herein, a deep‐level understanding of perovskite memristors is obtained by the development of highly reproducible devices. The approach is based on a highly stable perovskite formulation (MAPbBr3) and the use of preoxidized silver (AgI) as a buffer layer. Here, reliable perovskite memristors with device yields approaching 100%, stabilities of >104 cycles for volatile response, and adequate conditions for linear potentiation/depression for nonvolatile response are demonstrated. Using these devices, the nature of the dual volatile and nonvolatile response is understood. It is shown that applying short SET voltage (VSET) pulses leads to ion displacement inside the perovskite material with the formation of an ionic double layer close to the contacts. The displacement of the ions contributes to the series resistance of the device and to a volatile response with ions diffusing back to the perovskite at V < VSET. Alternatively, long VSET pulses lead to a gradual increase in current, the appearance of a chemical inductor, and a nonvolatile response. The observed nonvolatile regime is related to the formation of Ag+ conductive filaments. |
| format | Article |
| id | doaj-art-2388ae31bc584aa5ad78e02f0117d0d9 |
| institution | Kabale University |
| issn | 2688-4062 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Wiley-VCH |
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| series | Small Structures |
| spelling | doaj-art-2388ae31bc584aa5ad78e02f0117d0d92025-01-10T17:54:15ZengWiley-VCHSmall Structures2688-40622025-01-0161n/an/a10.1002/sstr.202400380Decoupling Volatile and Nonvolatile Response in Reliable Halide Perovskite MemristorsNaresh‐Kumar Pendyala0Cedric Gonzales1Antonio Guerrero2Institute of Advanced Materials (INAM) Universitat Jaume I 12006 Castelló SpainInstitute of Advanced Materials (INAM) Universitat Jaume I 12006 Castelló SpainInstitute of Advanced Materials (INAM) Universitat Jaume I 12006 Castelló SpainHalide perovskite is very attractive for the fabrication of energy‐efficient memristors for neuromorphic applications. However, reproducibility, stability, and understanding the switching behavior still lag in comparison to other technologies. Herein, a deep‐level understanding of perovskite memristors is obtained by the development of highly reproducible devices. The approach is based on a highly stable perovskite formulation (MAPbBr3) and the use of preoxidized silver (AgI) as a buffer layer. Here, reliable perovskite memristors with device yields approaching 100%, stabilities of >104 cycles for volatile response, and adequate conditions for linear potentiation/depression for nonvolatile response are demonstrated. Using these devices, the nature of the dual volatile and nonvolatile response is understood. It is shown that applying short SET voltage (VSET) pulses leads to ion displacement inside the perovskite material with the formation of an ionic double layer close to the contacts. The displacement of the ions contributes to the series resistance of the device and to a volatile response with ions diffusing back to the perovskite at V < VSET. Alternatively, long VSET pulses lead to a gradual increase in current, the appearance of a chemical inductor, and a nonvolatile response. The observed nonvolatile regime is related to the formation of Ag+ conductive filaments.https://doi.org/10.1002/sstr.202400380buffer layerscycling stabilityfrequency‐dependent mechanisticperovskite memristorssilver iodide |
| spellingShingle | Naresh‐Kumar Pendyala Cedric Gonzales Antonio Guerrero Decoupling Volatile and Nonvolatile Response in Reliable Halide Perovskite Memristors Small Structures buffer layers cycling stability frequency‐dependent mechanistic perovskite memristors silver iodide |
| title | Decoupling Volatile and Nonvolatile Response in Reliable Halide Perovskite Memristors |
| title_full | Decoupling Volatile and Nonvolatile Response in Reliable Halide Perovskite Memristors |
| title_fullStr | Decoupling Volatile and Nonvolatile Response in Reliable Halide Perovskite Memristors |
| title_full_unstemmed | Decoupling Volatile and Nonvolatile Response in Reliable Halide Perovskite Memristors |
| title_short | Decoupling Volatile and Nonvolatile Response in Reliable Halide Perovskite Memristors |
| title_sort | decoupling volatile and nonvolatile response in reliable halide perovskite memristors |
| topic | buffer layers cycling stability frequency‐dependent mechanistic perovskite memristors silver iodide |
| url | https://doi.org/10.1002/sstr.202400380 |
| work_keys_str_mv | AT nareshkumarpendyala decouplingvolatileandnonvolatileresponseinreliablehalideperovskitememristors AT cedricgonzales decouplingvolatileandnonvolatileresponseinreliablehalideperovskitememristors AT antonioguerrero decouplingvolatileandnonvolatileresponseinreliablehalideperovskitememristors |