Main Parameters Characterization of Bulk CMOS Cross-Like Hall Structures
A detailed analysis of the cross-like Hall cells integrated in regular bulk CMOS technological process is performed. To this purpose their main parameters have been evaluated. A three-dimensional physical model was employed in order to evaluate the structures. On this occasion, numerical information...
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| Format: | Article |
| Language: | English |
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Wiley
2016-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2016/6279162 |
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| _version_ | 1832562451631046656 |
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| author | Maria-Alexandra Paun |
| author_facet | Maria-Alexandra Paun |
| author_sort | Maria-Alexandra Paun |
| collection | DOAJ |
| description | A detailed analysis of the cross-like Hall cells integrated in regular bulk CMOS technological process is performed. To this purpose their main parameters have been evaluated. A three-dimensional physical model was employed in order to evaluate the structures. On this occasion, numerical information on the input resistance, Hall voltage, conduction current, and electrical potential distribution has been obtained. Experimental results for the absolute sensitivity, offset, and offset temperature drift have also been provided. A quadratic behavior of the residual offset with the temperature was obtained and the temperature points leading to the minimum offset for the three Hall cells were identified. |
| format | Article |
| id | doaj-art-233985f046ea4f11b4edebf1015ca05d |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2016-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-233985f046ea4f11b4edebf1015ca05d2025-02-03T01:22:33ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422016-01-01201610.1155/2016/62791626279162Main Parameters Characterization of Bulk CMOS Cross-Like Hall StructuresMaria-Alexandra Paun0Electronics Laboratory, Institute of Electrical Engineering, School of Engineering, Ecole Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, SwitzerlandA detailed analysis of the cross-like Hall cells integrated in regular bulk CMOS technological process is performed. To this purpose their main parameters have been evaluated. A three-dimensional physical model was employed in order to evaluate the structures. On this occasion, numerical information on the input resistance, Hall voltage, conduction current, and electrical potential distribution has been obtained. Experimental results for the absolute sensitivity, offset, and offset temperature drift have also been provided. A quadratic behavior of the residual offset with the temperature was obtained and the temperature points leading to the minimum offset for the three Hall cells were identified.http://dx.doi.org/10.1155/2016/6279162 |
| spellingShingle | Maria-Alexandra Paun Main Parameters Characterization of Bulk CMOS Cross-Like Hall Structures Advances in Materials Science and Engineering |
| title | Main Parameters Characterization of Bulk CMOS Cross-Like Hall Structures |
| title_full | Main Parameters Characterization of Bulk CMOS Cross-Like Hall Structures |
| title_fullStr | Main Parameters Characterization of Bulk CMOS Cross-Like Hall Structures |
| title_full_unstemmed | Main Parameters Characterization of Bulk CMOS Cross-Like Hall Structures |
| title_short | Main Parameters Characterization of Bulk CMOS Cross-Like Hall Structures |
| title_sort | main parameters characterization of bulk cmos cross like hall structures |
| url | http://dx.doi.org/10.1155/2016/6279162 |
| work_keys_str_mv | AT mariaalexandrapaun mainparameterscharacterizationofbulkcmoscrosslikehallstructures |