Ebers–Moll model inspired equivalent circuit for quantum thermal transistors

The widespread success of electronic transistors is partly due to their ability to be modeled using equivalent circuits, which not only enables detailed analysis and efficient design but also provides greater insight for designers, facilitating the development of complex electronic systems. The Eber...

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Main Authors: Anuradhi Rajapaksha, Sarath D. Gunapala, Malin Premaratne
Format: Article
Language:English
Published: AIP Publishing LLC 2025-06-01
Series:APL Quantum
Online Access:http://dx.doi.org/10.1063/5.0270456
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author Anuradhi Rajapaksha
Sarath D. Gunapala
Malin Premaratne
author_facet Anuradhi Rajapaksha
Sarath D. Gunapala
Malin Premaratne
author_sort Anuradhi Rajapaksha
collection DOAJ
description The widespread success of electronic transistors is partly due to their ability to be modeled using equivalent circuits, which not only enables detailed analysis and efficient design but also provides greater insight for designers, facilitating the development of complex electronic systems. The Ebers–Moll model, for example, is a widely used large-signal equivalent circuit that replicates the operational characteristics of bipolar junction transistors. Similar to electronic transistors, research on quantum thermal transistors has gained considerable attention in recent years; however, minimal focus has been placed on developing equivalent circuit representations. Drawing inspiration from equivalent models of electronic transistors, our study proposes an equivalent model for a quantum thermal transistor built on a strongly coupled qubit–qutrit–qubit architecture. This configuration allows replication of its transistor behavior using a diode-based equivalent model, leveraging its property of splitting the qutrit into two individual qubits. The proposed quantum thermal diode-based equivalent model closely mirrors the diode-based representation of an electronic transistor. Using frameworks of open quantum systems and the quantum Markovian master equation, along with the Born approximation and rotating wave approximation, we conduct a comprehensive analysis and comparison of our quantum thermal diode-based equivalent model with an established quantum thermal transistor model. Furthermore, we discuss the intrinsic internal coupling between the two diodes and determine the optimum coupling strength necessary for efficient heat amplification. This equivalent model provides greater insight into the analysis of quantum thermal transistors and significantly contributes to the advancement of nanoscale thermal circuit designs.
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institution DOAJ
issn 2835-0103
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publishDate 2025-06-01
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series APL Quantum
spelling doaj-art-2338023f0ebf4a2cbb251fd6628412442025-08-20T03:14:58ZengAIP Publishing LLCAPL Quantum2835-01032025-06-0122026119026119-1410.1063/5.0270456Ebers–Moll model inspired equivalent circuit for quantum thermal transistorsAnuradhi Rajapaksha0Sarath D. Gunapala1Malin Premaratne2Advanced Computing and Simulation Laboratory(AχL), Department of Electrical and Computer Systems Engineering, Monash University, Clayton, Victoria 3800, AustraliaJet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109, USAAdvanced Computing and Simulation Laboratory(AχL), Department of Electrical and Computer Systems Engineering, Monash University, Clayton, Victoria 3800, AustraliaThe widespread success of electronic transistors is partly due to their ability to be modeled using equivalent circuits, which not only enables detailed analysis and efficient design but also provides greater insight for designers, facilitating the development of complex electronic systems. The Ebers–Moll model, for example, is a widely used large-signal equivalent circuit that replicates the operational characteristics of bipolar junction transistors. Similar to electronic transistors, research on quantum thermal transistors has gained considerable attention in recent years; however, minimal focus has been placed on developing equivalent circuit representations. Drawing inspiration from equivalent models of electronic transistors, our study proposes an equivalent model for a quantum thermal transistor built on a strongly coupled qubit–qutrit–qubit architecture. This configuration allows replication of its transistor behavior using a diode-based equivalent model, leveraging its property of splitting the qutrit into two individual qubits. The proposed quantum thermal diode-based equivalent model closely mirrors the diode-based representation of an electronic transistor. Using frameworks of open quantum systems and the quantum Markovian master equation, along with the Born approximation and rotating wave approximation, we conduct a comprehensive analysis and comparison of our quantum thermal diode-based equivalent model with an established quantum thermal transistor model. Furthermore, we discuss the intrinsic internal coupling between the two diodes and determine the optimum coupling strength necessary for efficient heat amplification. This equivalent model provides greater insight into the analysis of quantum thermal transistors and significantly contributes to the advancement of nanoscale thermal circuit designs.http://dx.doi.org/10.1063/5.0270456
spellingShingle Anuradhi Rajapaksha
Sarath D. Gunapala
Malin Premaratne
Ebers–Moll model inspired equivalent circuit for quantum thermal transistors
APL Quantum
title Ebers–Moll model inspired equivalent circuit for quantum thermal transistors
title_full Ebers–Moll model inspired equivalent circuit for quantum thermal transistors
title_fullStr Ebers–Moll model inspired equivalent circuit for quantum thermal transistors
title_full_unstemmed Ebers–Moll model inspired equivalent circuit for quantum thermal transistors
title_short Ebers–Moll model inspired equivalent circuit for quantum thermal transistors
title_sort ebers moll model inspired equivalent circuit for quantum thermal transistors
url http://dx.doi.org/10.1063/5.0270456
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