Experimental determination of giant polarization in wurtzite III-nitride semiconductors
Abstract Polarization engineering has revolutionized the photonic and electronic landscape of III-nitride semiconductors over the past decades. However, recent revelations of giant ferroelectric polarization in wurtzite III-nitrides challenge the long-standing paradigms. Here, we experimentally eluc...
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| Main Authors: | , , , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-04-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-58975-0 |
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| Summary: | Abstract Polarization engineering has revolutionized the photonic and electronic landscape of III-nitride semiconductors over the past decades. However, recent revelations of giant ferroelectric polarization in wurtzite III-nitrides challenge the long-standing paradigms. Here, we experimentally elucidate the polarization, including its magnitude and orientation, and its relationship to lattice polarity in III-nitrides. Those experimentally determined polarizations exceeding 1 C/m2 with an upward orientation in metal-polar wurtzite nitride compounds align with recent theoretical predictions. To reconcile these findings, a unified polarization framework is established based on the centrosymmetric layered-hexagonal reference structure. This unified framework redefines the polarization landscape in contemporary GaN heterostructures, quantum structures, and ferroelectric heterostructures. Furthermore, we predict significant tunability and a dramatic increase in sheet carrier concentration in ferroelectric ScAlN/GaN heterostructures, heralding advancements in high-power, high-frequency, and reconfigurable transistors, and non-volatile memories. This work bridges the critical gap in the understanding of polarization in both conventional and ferroelectric wurtzite nitrides, offering fundamental insights and paving the way for next-generation photonic, electronic, and acoustic devices. |
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| ISSN: | 2041-1723 |