First-Principles Calculation on Initial Stage of Oxidation of Si (110)-(1 × 1) Surface
The initial stage of oxidation of an Si (110)-(1 × 1) surface was analyzed by using the first-principles calculation. Two calculation cells with different surface areas were prepared. In these cells, O atoms were located at the Si–Si bonds in the first layer (A-bonds) and at the Si–Si bonds between...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2011-01-01
|
| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2011/216065 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|