Effect of surface roughness on the nucleation of diamond on a 4H-SiC substrate
Diamond has the highest thermal conductivity among all materials and can be applied to overcome the heat dissipation problem in radio frequency devices based on the heterojunction of gallium nitride (GaN) and 4H silicon carbide (4H-SiC). However, growing high-quality diamond films on 4H-SiC substrat...
Saved in:
| Main Authors: | Hanchang Hu, Yuhao Zheng, Pan Deng, Tianqi Deng, Deren Yang, Xiaodong Pi |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2025-12-01
|
| Series: | Functional Diamond |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1080/26941112.2025.2529858 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Fabrication of low thermal resistance 3C-SiC/diamond structure for GaN epitaxial layer growth
by: Ryo Kagawa, et al.
Published: (2024-12-01) -
Thermodynamics of Nucleation of Silicon Carbide Nanocrystals during Carbonization of Porous Silicon
by: Yu.S. Nagornov
Published: (2016-10-01) -
Experiment and simulation of single diamond abrasive particle scratching RB-SiC composite material
by: Dehan ZHANG, et al.
Published: (2025-06-01) -
The preparation of multifunctional copper-nanocrystalline diamond composite materials
by: Xing Haojie, et al.
Published: (2025-12-01) -
Effect of voltage on electrochemical mechanical polishing (ECMP) of 4H–SiC with fixed abrasives
by: Pengfei Wu, et al.
Published: (2025-05-01)