Key Techniques of SiC MOSFET Chip Design and its Development Trend
It introduced the application advantages of SiC MOSFET and determined an optimized design of drift layer structure based on the theory of ideal blocking characteristics and on-state resistance. Afterwards, the design of key structures in cell was optimized in consideration of threshold voltage, oxid...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2017-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.01.007 |
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