Epitaxial integration of superconducting nitrides with cubic GaN
Epitaxial combination of transition metal nitrides and group III-nitrides holds significant potential for novel device architectures, given their wide array of properties and similar lattice constants. However, the mixture of hexagonal and cubic crystals limits structural quality and has stymied dev...
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2025-03-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0250514 |
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| author | Zach Cresswell Volodymyr Buturlim Sabin Regmi Kevin Vallejo Nicole Fessler Trent Garrett Kaustubh Bawane Anshul Kamboj Paul J. Simmonds Boopathy Kombaiah Krzysztof Gofryk Brelon May |
| author_facet | Zach Cresswell Volodymyr Buturlim Sabin Regmi Kevin Vallejo Nicole Fessler Trent Garrett Kaustubh Bawane Anshul Kamboj Paul J. Simmonds Boopathy Kombaiah Krzysztof Gofryk Brelon May |
| author_sort | Zach Cresswell |
| collection | DOAJ |
| description | Epitaxial combination of transition metal nitrides and group III-nitrides holds significant potential for novel device architectures, given their wide array of properties and similar lattice constants. However, the mixture of hexagonal and cubic crystals limits structural quality and has stymied development. This work will discuss the molecular beam epitaxy synthesis of metastable cubic GaN on 3C-SiC templates and its integration with cubic ZrN and NbN superconductors in single and multilayer heterostructures. The fully cubic nature of GaN and the epitaxial nature of all layers are confirmed via in situ and ex situ techniques. The electrical transport properties of transition metal nitrides on cubic GaN (001) are compared to those grown directly on 3C-SiC (001) and c-plane hexagonal GaN templates. The determination of a similar growth window for cubic wide-bandgap and superconducting metal nitrides creates a platform for new epitaxial device architectures and potential applications in metamaterials, quantum information science, and condensed matter physics. |
| format | Article |
| id | doaj-art-2245aecf1bed43609acf1faf7e03231c |
| institution | DOAJ |
| issn | 2166-532X |
| language | English |
| publishDate | 2025-03-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj-art-2245aecf1bed43609acf1faf7e03231c2025-08-20T03:03:07ZengAIP Publishing LLCAPL Materials2166-532X2025-03-01133031106031106-710.1063/5.0250514Epitaxial integration of superconducting nitrides with cubic GaNZach Cresswell0Volodymyr Buturlim1Sabin Regmi2Kevin Vallejo3Nicole Fessler4Trent Garrett5Kaustubh Bawane6Anshul Kamboj7Paul J. Simmonds8Boopathy Kombaiah9Krzysztof Gofryk10Brelon May11Idaho National Lab, Idaho Falls, Idaho 83415, USAIdaho National Lab, Idaho Falls, Idaho 83415, USAIdaho National Lab, Idaho Falls, Idaho 83415, USAIdaho National Lab, Idaho Falls, Idaho 83415, USAIdaho National Lab, Idaho Falls, Idaho 83415, USAIdaho National Lab, Idaho Falls, Idaho 83415, USAIdaho National Lab, Idaho Falls, Idaho 83415, USAIdaho National Lab, Idaho Falls, Idaho 83415, USADepartment of Electrical and Computer Engineering, Tufts University, Medford, Massachusetts 02155, USAIdaho National Lab, Idaho Falls, Idaho 83415, USAIdaho National Lab, Idaho Falls, Idaho 83415, USAIdaho National Lab, Idaho Falls, Idaho 83415, USAEpitaxial combination of transition metal nitrides and group III-nitrides holds significant potential for novel device architectures, given their wide array of properties and similar lattice constants. However, the mixture of hexagonal and cubic crystals limits structural quality and has stymied development. This work will discuss the molecular beam epitaxy synthesis of metastable cubic GaN on 3C-SiC templates and its integration with cubic ZrN and NbN superconductors in single and multilayer heterostructures. The fully cubic nature of GaN and the epitaxial nature of all layers are confirmed via in situ and ex situ techniques. The electrical transport properties of transition metal nitrides on cubic GaN (001) are compared to those grown directly on 3C-SiC (001) and c-plane hexagonal GaN templates. The determination of a similar growth window for cubic wide-bandgap and superconducting metal nitrides creates a platform for new epitaxial device architectures and potential applications in metamaterials, quantum information science, and condensed matter physics.http://dx.doi.org/10.1063/5.0250514 |
| spellingShingle | Zach Cresswell Volodymyr Buturlim Sabin Regmi Kevin Vallejo Nicole Fessler Trent Garrett Kaustubh Bawane Anshul Kamboj Paul J. Simmonds Boopathy Kombaiah Krzysztof Gofryk Brelon May Epitaxial integration of superconducting nitrides with cubic GaN APL Materials |
| title | Epitaxial integration of superconducting nitrides with cubic GaN |
| title_full | Epitaxial integration of superconducting nitrides with cubic GaN |
| title_fullStr | Epitaxial integration of superconducting nitrides with cubic GaN |
| title_full_unstemmed | Epitaxial integration of superconducting nitrides with cubic GaN |
| title_short | Epitaxial integration of superconducting nitrides with cubic GaN |
| title_sort | epitaxial integration of superconducting nitrides with cubic gan |
| url | http://dx.doi.org/10.1063/5.0250514 |
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