Atomic Pathways of Crystal-to-Crystal Transitions and Electronic Origins of Resistive Switching in MnTe for Ultralow-Power Memory
In conventional phase change memory (PCM) technology, the melting process required to create an amorphous state typically results in extremely high power consumption. Recently, a new type of PCM device based on a melting-free crystal-to-crystal phase transition in MnTe has been developed, offering a...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-01-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/15/3/231 |
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