Atomic Pathways of Crystal-to-Crystal Transitions and Electronic Origins of Resistive Switching in MnTe for Ultralow-Power Memory
In conventional phase change memory (PCM) technology, the melting process required to create an amorphous state typically results in extremely high power consumption. Recently, a new type of PCM device based on a melting-free crystal-to-crystal phase transition in MnTe has been developed, offering a...
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2025-01-01
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| author | Rui Wu Nian-Ke Chen Ming-Yu Ma Bai-Qian Wang Yu-Ting Huang Bin Zhang Xian-Bin Li |
| author_facet | Rui Wu Nian-Ke Chen Ming-Yu Ma Bai-Qian Wang Yu-Ting Huang Bin Zhang Xian-Bin Li |
| author_sort | Rui Wu |
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| description | In conventional phase change memory (PCM) technology, the melting process required to create an amorphous state typically results in extremely high power consumption. Recently, a new type of PCM device based on a melting-free crystal-to-crystal phase transition in MnTe has been developed, offering a potential solution to the problem. However, the electronic and atomic mechanisms underlying this transition remain unclear. In this work, by first-principles calculations, the resistance contrast is attributed to the differences in hole effective mass and vacancy formation energy of the two phases. Moreover, two phase transition pathways of the α-MnTe-to-β-MnTe transition, namely, the ‘slide-and-stand-up’ transitions, are identified based on coherent atomic movements. The energy barriers for the two pathways are 0.17 eV per formula unit (f.u.) and 0.38 eV/f.u., respectively. Furthermore, the energy barriers can be reduced to 0.10 eV/f.u. and 0.26 eV/f.u. via c-axis tensile strains, which makes the phase transition easier. The current result provides new insights into the non-melting phase transition process in MnTe, facilitating the development of low-power PCM technology. |
| format | Article |
| id | doaj-art-2201471252dc48a4b1c2601e44f75a3a |
| institution | DOAJ |
| issn | 2079-4991 |
| language | English |
| publishDate | 2025-01-01 |
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| series | Nanomaterials |
| spelling | doaj-art-2201471252dc48a4b1c2601e44f75a3a2025-08-20T02:48:07ZengMDPI AGNanomaterials2079-49912025-01-0115323110.3390/nano15030231Atomic Pathways of Crystal-to-Crystal Transitions and Electronic Origins of Resistive Switching in MnTe for Ultralow-Power MemoryRui Wu0Nian-Ke Chen1Ming-Yu Ma2Bai-Qian Wang3Yu-Ting Huang4Bin Zhang5Xian-Bin Li6State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, ChinaState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, ChinaState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, ChinaState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, ChinaState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, ChinaAnalytical and Testing Center, Chongqing University, Chongqing 401331, ChinaState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, ChinaIn conventional phase change memory (PCM) technology, the melting process required to create an amorphous state typically results in extremely high power consumption. Recently, a new type of PCM device based on a melting-free crystal-to-crystal phase transition in MnTe has been developed, offering a potential solution to the problem. However, the electronic and atomic mechanisms underlying this transition remain unclear. In this work, by first-principles calculations, the resistance contrast is attributed to the differences in hole effective mass and vacancy formation energy of the two phases. Moreover, two phase transition pathways of the α-MnTe-to-β-MnTe transition, namely, the ‘slide-and-stand-up’ transitions, are identified based on coherent atomic movements. The energy barriers for the two pathways are 0.17 eV per formula unit (f.u.) and 0.38 eV/f.u., respectively. Furthermore, the energy barriers can be reduced to 0.10 eV/f.u. and 0.26 eV/f.u. via c-axis tensile strains, which makes the phase transition easier. The current result provides new insights into the non-melting phase transition process in MnTe, facilitating the development of low-power PCM technology.https://www.mdpi.com/2079-4991/15/3/231phase change memoryMnTefirst-principles calculationscrystal-to-crystal transitions |
| spellingShingle | Rui Wu Nian-Ke Chen Ming-Yu Ma Bai-Qian Wang Yu-Ting Huang Bin Zhang Xian-Bin Li Atomic Pathways of Crystal-to-Crystal Transitions and Electronic Origins of Resistive Switching in MnTe for Ultralow-Power Memory Nanomaterials phase change memory MnTe first-principles calculations crystal-to-crystal transitions |
| title | Atomic Pathways of Crystal-to-Crystal Transitions and Electronic Origins of Resistive Switching in MnTe for Ultralow-Power Memory |
| title_full | Atomic Pathways of Crystal-to-Crystal Transitions and Electronic Origins of Resistive Switching in MnTe for Ultralow-Power Memory |
| title_fullStr | Atomic Pathways of Crystal-to-Crystal Transitions and Electronic Origins of Resistive Switching in MnTe for Ultralow-Power Memory |
| title_full_unstemmed | Atomic Pathways of Crystal-to-Crystal Transitions and Electronic Origins of Resistive Switching in MnTe for Ultralow-Power Memory |
| title_short | Atomic Pathways of Crystal-to-Crystal Transitions and Electronic Origins of Resistive Switching in MnTe for Ultralow-Power Memory |
| title_sort | atomic pathways of crystal to crystal transitions and electronic origins of resistive switching in mnte for ultralow power memory |
| topic | phase change memory MnTe first-principles calculations crystal-to-crystal transitions |
| url | https://www.mdpi.com/2079-4991/15/3/231 |
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