Fabrication, properties and application of Ge-on-GaAs thin nanoheterogeneous films
Ge thin films condensation in vacuum onto semiinsulating GaAs(100) substrates was investigated. The methods of atomic-force microscopy, optical spectroscopy, measurement of intrinsic mechanical stresses in film, and electronic properties were used for this investigation. It was found that it is poss...
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| Format: | Article |
| Language: | English |
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Politehperiodika
2014-08-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
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| Online Access: | https://tkea.com.ua/index.php/journal/article/view/313 |
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| author | E. F. Venger P. M. Lytvyn L. A. Matveeva V. F. Mitin V. V. Kholevchuk |
| author_facet | E. F. Venger P. M. Lytvyn L. A. Matveeva V. F. Mitin V. V. Kholevchuk |
| author_sort | E. F. Venger |
| collection | DOAJ |
| description | Ge thin films condensation in vacuum onto semiinsulating GaAs(100) substrates was investigated. The methods of atomic-force microscopy, optical spectroscopy, measurement of intrinsic mechanical stresses in film, and electronic properties were used for this investigation. It was found that it is possible to obtain thin nanoheterogeneous monocrystalline dislocation-free films with low intrinsic mechanical stresses and two-dimension percolation-type conductivity, as well as high temperature sensitivity that can be used for IR and electronics technologies. |
| format | Article |
| id | doaj-art-21eb4310bb3e46388a2b0850b758b724 |
| institution | OA Journals |
| issn | 2225-5818 2309-9992 |
| language | English |
| publishDate | 2014-08-01 |
| publisher | Politehperiodika |
| record_format | Article |
| series | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| spelling | doaj-art-21eb4310bb3e46388a2b0850b758b7242025-08-20T01:52:01ZengPolitehperiodikaTekhnologiya i Konstruirovanie v Elektronnoi Apparature2225-58182309-99922014-08-014394410.15222/TKEA2014.4.39313Fabrication, properties and application of Ge-on-GaAs thin nanoheterogeneous filmsE. F. Venger0P. M. Lytvyn1L. A. Matveeva2V. F. Mitin3V. V. Kholevchuk4V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, UkraineV. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, UkraineV. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, UkraineV. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, UkraineV. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, UkraineGe thin films condensation in vacuum onto semiinsulating GaAs(100) substrates was investigated. The methods of atomic-force microscopy, optical spectroscopy, measurement of intrinsic mechanical stresses in film, and electronic properties were used for this investigation. It was found that it is possible to obtain thin nanoheterogeneous monocrystalline dislocation-free films with low intrinsic mechanical stresses and two-dimension percolation-type conductivity, as well as high temperature sensitivity that can be used for IR and electronics technologies.https://tkea.com.ua/index.php/journal/article/view/313ge filmsgrowth ratesurface morphologyelectronic and optical propertiesintrinsic mechanical stresses |
| spellingShingle | E. F. Venger P. M. Lytvyn L. A. Matveeva V. F. Mitin V. V. Kholevchuk Fabrication, properties and application of Ge-on-GaAs thin nanoheterogeneous films Tekhnologiya i Konstruirovanie v Elektronnoi Apparature ge films growth rate surface morphology electronic and optical properties intrinsic mechanical stresses |
| title | Fabrication, properties and application of Ge-on-GaAs thin nanoheterogeneous films |
| title_full | Fabrication, properties and application of Ge-on-GaAs thin nanoheterogeneous films |
| title_fullStr | Fabrication, properties and application of Ge-on-GaAs thin nanoheterogeneous films |
| title_full_unstemmed | Fabrication, properties and application of Ge-on-GaAs thin nanoheterogeneous films |
| title_short | Fabrication, properties and application of Ge-on-GaAs thin nanoheterogeneous films |
| title_sort | fabrication properties and application of ge on gaas thin nanoheterogeneous films |
| topic | ge films growth rate surface morphology electronic and optical properties intrinsic mechanical stresses |
| url | https://tkea.com.ua/index.php/journal/article/view/313 |
| work_keys_str_mv | AT efvenger fabricationpropertiesandapplicationofgeongaasthinnanoheterogeneousfilms AT pmlytvyn fabricationpropertiesandapplicationofgeongaasthinnanoheterogeneousfilms AT lamatveeva fabricationpropertiesandapplicationofgeongaasthinnanoheterogeneousfilms AT vfmitin fabricationpropertiesandapplicationofgeongaasthinnanoheterogeneousfilms AT vvkholevchuk fabricationpropertiesandapplicationofgeongaasthinnanoheterogeneousfilms |