4H–SiC Avalanche Photodiode Linear Array Operating in Geiger Mode
In this study, a 50-pixel linear array of 4H–SiC ultraviolet avalanche photodiodes operating in Geiger mode is reported for the first time. The 50 pixels within the linear array are all capable of detecting single photons but with a small number of them suffering from extra leakage curren...
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| Format: | Article |
| Language: | English |
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IEEE
2017-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/8031321/ |
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| _version_ | 1850109053366173696 |
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| author | Lianghui Li Dong Zhou Hai Lu Wenkai Liu Xiaofan Mo Fangfang Ren Dunjun Chen Ruiqi Wang Guanglei Li Rong Zhang Youdou Zheng |
| author_facet | Lianghui Li Dong Zhou Hai Lu Wenkai Liu Xiaofan Mo Fangfang Ren Dunjun Chen Ruiqi Wang Guanglei Li Rong Zhang Youdou Zheng |
| author_sort | Lianghui Li |
| collection | DOAJ |
| description | In this study, a 50-pixel linear array of 4H–SiC ultraviolet avalanche photodiodes operating in Geiger mode is reported for the first time. The 50 pixels within the linear array are all capable of detecting single photons but with a small number of them suffering from extra leakage current near avalanche breakdown. The enhanced leakage is likely correlated with structural defects existing within the epitaxial structure, which would lead to higher dark count rate (DCR) at the same single photon detection efficiency (SPDE) in Geiger mode. For a low-leakage avalanche photodiode device within the linear array, a room temperature SPDE of 15.4% at 280 nm is obtained with a corresponding DCR of 2.5 Hz/μm<sup>2</sup>. |
| format | Article |
| id | doaj-art-21cecf3132004d0f9e2f8a500a5ffa5b |
| institution | OA Journals |
| issn | 1943-0655 |
| language | English |
| publishDate | 2017-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-21cecf3132004d0f9e2f8a500a5ffa5b2025-08-20T02:38:11ZengIEEEIEEE Photonics Journal1943-06552017-01-01951710.1109/JPHOT.2017.275068680313214H–SiC Avalanche Photodiode Linear Array Operating in Geiger ModeLianghui Li0Dong Zhou1Hai Lu2Wenkai Liu3Xiaofan Mo4Fangfang Ren5Dunjun Chen6Ruiqi Wang7Guanglei Li8Rong Zhang9Youdou Zheng10School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaSchool of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaSchool of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaSchool of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaSchool of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaSchool of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaSchool of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaState Grid Shandong Electric Power Research Institute, Jinan, ChinaState Grid Shandong Electric Power Research Institute, Jinan, ChinaSchool of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaSchool of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaIn this study, a 50-pixel linear array of 4H–SiC ultraviolet avalanche photodiodes operating in Geiger mode is reported for the first time. The 50 pixels within the linear array are all capable of detecting single photons but with a small number of them suffering from extra leakage current near avalanche breakdown. The enhanced leakage is likely correlated with structural defects existing within the epitaxial structure, which would lead to higher dark count rate (DCR) at the same single photon detection efficiency (SPDE) in Geiger mode. For a low-leakage avalanche photodiode device within the linear array, a room temperature SPDE of 15.4% at 280 nm is obtained with a corresponding DCR of 2.5 Hz/μm<sup>2</sup>.https://ieeexplore.ieee.org/document/8031321/4H-SiCavalanche photodiodeslinear arrayultraviolet photodetectorGeiger mode. |
| spellingShingle | Lianghui Li Dong Zhou Hai Lu Wenkai Liu Xiaofan Mo Fangfang Ren Dunjun Chen Ruiqi Wang Guanglei Li Rong Zhang Youdou Zheng 4H–SiC Avalanche Photodiode Linear Array Operating in Geiger Mode IEEE Photonics Journal 4H-SiC avalanche photodiodes linear array ultraviolet photodetector Geiger mode. |
| title | 4H–SiC Avalanche Photodiode Linear Array Operating in Geiger Mode |
| title_full | 4H–SiC Avalanche Photodiode Linear Array Operating in Geiger Mode |
| title_fullStr | 4H–SiC Avalanche Photodiode Linear Array Operating in Geiger Mode |
| title_full_unstemmed | 4H–SiC Avalanche Photodiode Linear Array Operating in Geiger Mode |
| title_short | 4H–SiC Avalanche Photodiode Linear Array Operating in Geiger Mode |
| title_sort | 4h x2013 sic avalanche photodiode linear array operating in geiger mode |
| topic | 4H-SiC avalanche photodiodes linear array ultraviolet photodetector Geiger mode. |
| url | https://ieeexplore.ieee.org/document/8031321/ |
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