1 200 V Hybrid SiC Power Module with Low Stray Inductance

In order to realize low stray inductance package of 1 200 V hybrid Silicon Carbide (SiC) power module, the measures were taken including selecting optimum chips, optimizing chip layout and replacing bridge joint with low inductance busbar, so that the stray inductance decreased to 16 nH in the power...

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Main Authors: LI Chengzhan, CHANG Guiqin, PENG Yongdian, FANG Jie, ZHOU Wangjun
Format: Article
Language:zho
Published: Editorial Office of Control and Information Technology 2016-01-01
Series:Kongzhi Yu Xinxi Jishu
Subjects:
Online Access:http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.05.015
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author LI Chengzhan
CHANG Guiqin
PENG Yongdian
FANG Jie
ZHOU Wangjun
author_facet LI Chengzhan
CHANG Guiqin
PENG Yongdian
FANG Jie
ZHOU Wangjun
author_sort LI Chengzhan
collection DOAJ
description In order to realize low stray inductance package of 1 200 V hybrid Silicon Carbide (SiC) power module, the measures were taken including selecting optimum chips, optimizing chip layout and replacing bridge joint with low inductance busbar, so that the stray inductance decreased to 16 nH in the power module to effectively reduce the peak current and oscillation period of the hybrid SiC module, relieve the current oscillation and decrease the turn-on loss. The transfer efficiency of 30 kW PV inverter with the low stray inductance hybrid SiC module increased to 97.95%.
format Article
id doaj-art-20fec191448540f78a5bb36ebbeed5f3
institution Kabale University
issn 2096-5427
language zho
publishDate 2016-01-01
publisher Editorial Office of Control and Information Technology
record_format Article
series Kongzhi Yu Xinxi Jishu
spelling doaj-art-20fec191448540f78a5bb36ebbeed5f32025-08-25T06:54:29ZzhoEditorial Office of Control and Information TechnologyKongzhi Yu Xinxi Jishu2096-54272016-01-017174823281201 200 V Hybrid SiC Power Module with Low Stray InductanceLI ChengzhanCHANG GuiqinPENG YongdianFANG JieZHOU WangjunIn order to realize low stray inductance package of 1 200 V hybrid Silicon Carbide (SiC) power module, the measures were taken including selecting optimum chips, optimizing chip layout and replacing bridge joint with low inductance busbar, so that the stray inductance decreased to 16 nH in the power module to effectively reduce the peak current and oscillation period of the hybrid SiC module, relieve the current oscillation and decrease the turn-on loss. The transfer efficiency of 30 kW PV inverter with the low stray inductance hybrid SiC module increased to 97.95%.http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.05.015Silicon Carbide(SiC)power modulestray inductancecurrent oscillation
spellingShingle LI Chengzhan
CHANG Guiqin
PENG Yongdian
FANG Jie
ZHOU Wangjun
1 200 V Hybrid SiC Power Module with Low Stray Inductance
Kongzhi Yu Xinxi Jishu
Silicon Carbide(SiC)
power module
stray inductance
current oscillation
title 1 200 V Hybrid SiC Power Module with Low Stray Inductance
title_full 1 200 V Hybrid SiC Power Module with Low Stray Inductance
title_fullStr 1 200 V Hybrid SiC Power Module with Low Stray Inductance
title_full_unstemmed 1 200 V Hybrid SiC Power Module with Low Stray Inductance
title_short 1 200 V Hybrid SiC Power Module with Low Stray Inductance
title_sort 1 200 v hybrid sic power module with low stray inductance
topic Silicon Carbide(SiC)
power module
stray inductance
current oscillation
url http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.05.015
work_keys_str_mv AT lichengzhan 1200vhybridsicpowermodulewithlowstrayinductance
AT changguiqin 1200vhybridsicpowermodulewithlowstrayinductance
AT pengyongdian 1200vhybridsicpowermodulewithlowstrayinductance
AT fangjie 1200vhybridsicpowermodulewithlowstrayinductance
AT zhouwangjun 1200vhybridsicpowermodulewithlowstrayinductance