1 200 V Hybrid SiC Power Module with Low Stray Inductance
In order to realize low stray inductance package of 1 200 V hybrid Silicon Carbide (SiC) power module, the measures were taken including selecting optimum chips, optimizing chip layout and replacing bridge joint with low inductance busbar, so that the stray inductance decreased to 16 nH in the power...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2016-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.05.015 |
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| Summary: | In order to realize low stray inductance package of 1 200 V hybrid Silicon Carbide (SiC) power module, the measures were taken including selecting optimum chips, optimizing chip layout and replacing bridge joint with low inductance busbar, so that the stray inductance decreased to 16 nH in the power module to effectively reduce the peak current and oscillation period of the hybrid SiC module, relieve the current oscillation and decrease the turn-on loss. The transfer efficiency of 30 kW PV inverter with the low stray inductance hybrid SiC module increased to 97.95%. |
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| ISSN: | 2096-5427 |