Research on High-power Full SiC Converter

In order to adapt to the development trend of high frequency and high power density of converter products, the application of high-power all-SiC-MOSFET device in converter was studied. The problem of stray parameters and bridge arms crosstalk in application of all-SiC-MOSFET devices was discussed. T...

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Main Authors: ZHANG Qing, ZHANG Xiaoyong, RAO Peinan, SHI Hongliang, ZHAO Mingrui, ZHOU Shuai
Format: Article
Language:zho
Published: Editorial Department of Electric Drive for Locomotives 2018-01-01
Series:机车电传动
Subjects:
Online Access:http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128x.2018.06.013
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author ZHANG Qing
ZHANG Xiaoyong
RAO Peinan
SHI Hongliang
ZHAO Mingrui
ZHOU Shuai
author_facet ZHANG Qing
ZHANG Xiaoyong
RAO Peinan
SHI Hongliang
ZHAO Mingrui
ZHOU Shuai
author_sort ZHANG Qing
collection DOAJ
description In order to adapt to the development trend of high frequency and high power density of converter products, the application of high-power all-SiC-MOSFET device in converter was studied. The problem of stray parameters and bridge arms crosstalk in application of all-SiC-MOSFET devices was discussed. The effect of drive resistance and absorber on the closing peak of high-power all-SiC-MOSFET device was studied. The application of high-power SiC-MOSFET device in Boost converter was studied. The experiment showed that compared with the original Si-IGBT, the adoption of SiC-MOSFET device could bring an all-round improvement in light weight, working frequency and efficiency to the converter.
format Article
id doaj-art-20ce5507d1484fdf99da496c9724c67f
institution DOAJ
issn 1000-128X
language zho
publishDate 2018-01-01
publisher Editorial Department of Electric Drive for Locomotives
record_format Article
series 机车电传动
spelling doaj-art-20ce5507d1484fdf99da496c9724c67f2025-08-20T03:09:25ZzhoEditorial Department of Electric Drive for Locomotives机车电传动1000-128X2018-01-01636620915007Research on High-power Full SiC ConverterZHANG QingZHANG XiaoyongRAO PeinanSHI HongliangZHAO MingruiZHOU ShuaiIn order to adapt to the development trend of high frequency and high power density of converter products, the application of high-power all-SiC-MOSFET device in converter was studied. The problem of stray parameters and bridge arms crosstalk in application of all-SiC-MOSFET devices was discussed. The effect of drive resistance and absorber on the closing peak of high-power all-SiC-MOSFET device was studied. The application of high-power SiC-MOSFET device in Boost converter was studied. The experiment showed that compared with the original Si-IGBT, the adoption of SiC-MOSFET device could bring an all-round improvement in light weight, working frequency and efficiency to the converter.http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128x.2018.06.013SiC deviceSiC-MOSFETstray inductancebridge arm crosstalkoscillation suppressionhigh-frequency
spellingShingle ZHANG Qing
ZHANG Xiaoyong
RAO Peinan
SHI Hongliang
ZHAO Mingrui
ZHOU Shuai
Research on High-power Full SiC Converter
机车电传动
SiC device
SiC-MOSFET
stray inductance
bridge arm crosstalk
oscillation suppression
high-frequency
title Research on High-power Full SiC Converter
title_full Research on High-power Full SiC Converter
title_fullStr Research on High-power Full SiC Converter
title_full_unstemmed Research on High-power Full SiC Converter
title_short Research on High-power Full SiC Converter
title_sort research on high power full sic converter
topic SiC device
SiC-MOSFET
stray inductance
bridge arm crosstalk
oscillation suppression
high-frequency
url http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128x.2018.06.013
work_keys_str_mv AT zhangqing researchonhighpowerfullsicconverter
AT zhangxiaoyong researchonhighpowerfullsicconverter
AT raopeinan researchonhighpowerfullsicconverter
AT shihongliang researchonhighpowerfullsicconverter
AT zhaomingrui researchonhighpowerfullsicconverter
AT zhoushuai researchonhighpowerfullsicconverter