Research on High-power Full SiC Converter
In order to adapt to the development trend of high frequency and high power density of converter products, the application of high-power all-SiC-MOSFET device in converter was studied. The problem of stray parameters and bridge arms crosstalk in application of all-SiC-MOSFET devices was discussed. T...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Department of Electric Drive for Locomotives
2018-01-01
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| Series: | 机车电传动 |
| Subjects: | |
| Online Access: | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128x.2018.06.013 |
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| Summary: | In order to adapt to the development trend of high frequency and high power density of converter products, the application of high-power all-SiC-MOSFET device in converter was studied. The problem of stray parameters and bridge arms crosstalk in application of all-SiC-MOSFET devices was discussed. The effect of drive resistance and absorber on the closing peak of high-power all-SiC-MOSFET device was studied. The application of high-power SiC-MOSFET device in Boost converter was studied. The experiment showed that compared with the original Si-IGBT, the adoption of SiC-MOSFET device could bring an all-round improvement in light weight, working frequency and efficiency to the converter. |
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| ISSN: | 1000-128X |