Near Junction Integration of Vapor Chamber for Transient Thermal Performance Improvements of SiC Power Module
Power semiconductor modules are mostly stressed when faced with large junction temperature variations, leading to failures such as bond wire lift-off and solder fatigue. This issue becomes more challenging with the implementation of SiC devices because their smaller die size reduces the thermal iner...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Open Journal of Power Electronics |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10839392/ |
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