Near Junction Integration of Vapor Chamber for Transient Thermal Performance Improvements of SiC Power Module

Near Junction Integration of Vapor Chamber for Transient Thermal Performance Improvements of SiC Power Module

Power semiconductor modules are mostly stressed when faced with large junction temperature variations, leading to failures such as bond wire lift-off and solder fatigue. This issue becomes more challenging with the implementation of SiC devices because their smaller die size reduces the thermal iner...

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Bibliographic Details
Main Authors: Wei Mu, Laili Wang, Haoyuan Jin, Borong Hu, Binyu Wang, Jinfeng Zhang, Liang Wang, Teng Long
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Open Journal of Power Electronics
Subjects:
Vapor chamber (VC)
Near junction thermal management
SiC packaging
Reliability
Traction inverter
Online Access:https://ieeexplore.ieee.org/document/10839392/
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