Near Junction Integration of Vapor Chamber for Transient Thermal Performance Improvements of SiC Power Module
Power semiconductor modules are mostly stressed when faced with large junction temperature variations, leading to failures such as bond wire lift-off and solder fatigue. This issue becomes more challenging with the implementation of SiC devices because their smaller die size reduces the thermal iner...
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| Format: | Article |
| Language: | English |
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IEEE
2025-01-01
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| Series: | IEEE Open Journal of Power Electronics |
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| Online Access: | https://ieeexplore.ieee.org/document/10839392/ |
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| _version_ | 1823857041702125568 |
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| author | Wei Mu Laili Wang Haoyuan Jin Borong Hu Binyu Wang Jinfeng Zhang Liang Wang Teng Long |
| author_facet | Wei Mu Laili Wang Haoyuan Jin Borong Hu Binyu Wang Jinfeng Zhang Liang Wang Teng Long |
| author_sort | Wei Mu |
| collection | DOAJ |
| description | Power semiconductor modules are mostly stressed when faced with large junction temperature variations, leading to failures such as bond wire lift-off and solder fatigue. This issue becomes more challenging with the implementation of SiC devices because their smaller die size reduces the thermal inertia and increases the thermal resistance. This paper explores the potential of utilizing vapor chamber (VC) through near junction integration inside a SiC power module to reduce junction temperature swings. A novel fabrication process enables the near junction integration of VC which not only acts as heat spreaders but also conducts the drain current of MOSFETs. The thermal impedance analysis in the frequency domain highlights VC's strong attenuation effect on medium frequency thermal cycles, which are particularly damaging to power modules. Two case studies are performed to evaluate the thermal performance of VC integrated module in traction inverter applications. Both simulations and experiments demonstrate the effectiveness of integrating VC: more than 33% reduction in maximum junction temperature and 44% reduction in junction temperature fluctuation. Time constant spectrum analysis further reveals that the VC module's superior thermal performance stems from its ability to minimize thermal resistance components with short time constants, a benefit that is unique to near-junction thermal management |
| format | Article |
| id | doaj-art-20aeab0741404f428740557f30fd37c2 |
| institution | Kabale University |
| issn | 2644-1314 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Open Journal of Power Electronics |
| spelling | doaj-art-20aeab0741404f428740557f30fd37c22025-02-12T00:02:59ZengIEEEIEEE Open Journal of Power Electronics2644-13142025-01-01628629910.1109/OJPEL.2024.352449210839392Near Junction Integration of Vapor Chamber for Transient Thermal Performance Improvements of SiC Power ModuleWei Mu0https://orcid.org/0000-0002-6582-5551Laili Wang1https://orcid.org/0000-0002-9938-5590Haoyuan Jin2https://orcid.org/0000-0001-5777-9543Borong Hu3https://orcid.org/0000-0001-7730-1600Binyu Wang4https://orcid.org/0009-0008-0033-5982Jinfeng Zhang5Liang Wang6https://orcid.org/0000-0003-2246-9443Teng Long7https://orcid.org/0000-0003-4401-102XElectrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge, U.K.School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi, ChinaSchool of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi, ChinaElectrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge, U.K.School of Electronics and Control Engineering, Chang'an University, Xi'an, Shaanxi, ChinaElectrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge, U.K.Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge, U.K.Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge, U.K.Power semiconductor modules are mostly stressed when faced with large junction temperature variations, leading to failures such as bond wire lift-off and solder fatigue. This issue becomes more challenging with the implementation of SiC devices because their smaller die size reduces the thermal inertia and increases the thermal resistance. This paper explores the potential of utilizing vapor chamber (VC) through near junction integration inside a SiC power module to reduce junction temperature swings. A novel fabrication process enables the near junction integration of VC which not only acts as heat spreaders but also conducts the drain current of MOSFETs. The thermal impedance analysis in the frequency domain highlights VC's strong attenuation effect on medium frequency thermal cycles, which are particularly damaging to power modules. Two case studies are performed to evaluate the thermal performance of VC integrated module in traction inverter applications. Both simulations and experiments demonstrate the effectiveness of integrating VC: more than 33% reduction in maximum junction temperature and 44% reduction in junction temperature fluctuation. Time constant spectrum analysis further reveals that the VC module's superior thermal performance stems from its ability to minimize thermal resistance components with short time constants, a benefit that is unique to near-junction thermal managementhttps://ieeexplore.ieee.org/document/10839392/Vapor chamber (VC)Near junction thermal managementSiC packagingReliabilityTraction inverter |
| spellingShingle | Wei Mu Laili Wang Haoyuan Jin Borong Hu Binyu Wang Jinfeng Zhang Liang Wang Teng Long Near Junction Integration of Vapor Chamber for Transient Thermal Performance Improvements of SiC Power Module IEEE Open Journal of Power Electronics Vapor chamber (VC) Near junction thermal management SiC packaging Reliability Traction inverter |
| title | Near Junction Integration of Vapor Chamber for Transient Thermal Performance Improvements of SiC Power Module |
| title_full | Near Junction Integration of Vapor Chamber for Transient Thermal Performance Improvements of SiC Power Module |
| title_fullStr | Near Junction Integration of Vapor Chamber for Transient Thermal Performance Improvements of SiC Power Module |
| title_full_unstemmed | Near Junction Integration of Vapor Chamber for Transient Thermal Performance Improvements of SiC Power Module |
| title_short | Near Junction Integration of Vapor Chamber for Transient Thermal Performance Improvements of SiC Power Module |
| title_sort | near junction integration of vapor chamber for transient thermal performance improvements of sic power module |
| topic | Vapor chamber (VC) Near junction thermal management SiC packaging Reliability Traction inverter |
| url | https://ieeexplore.ieee.org/document/10839392/ |
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