Design and Simulated Characteristics of Nanosized InSb Based Heterostructure Devices
Indium antimonide nanoparticles were synthesized at room temperature. X-ray diffraction measurements are utilized to characterize the nanocomposites. The InSb nanoparticle has an average particle size in a range of 47 mm to 99 mm which is observed using the XRD result. The InSb is a material which i...
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| Format: | Article |
| Language: | English |
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Wiley
2014-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2014/196732 |
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| author | T. D. Subash T. Gnanasekaran C. Divya J. Jagannathan |
| author_facet | T. D. Subash T. Gnanasekaran C. Divya J. Jagannathan |
| author_sort | T. D. Subash |
| collection | DOAJ |
| description | Indium antimonide nanoparticles were synthesized at room temperature. X-ray diffraction measurements are utilized to characterize the nanocomposites. The InSb nanoparticle has an average particle size in a range of 47 mm to 99 mm which is observed using the XRD result. The InSb is a material which is used to design the transistor. For designing purpose the simulator TCAD is used, by which the HEMT device is structured and its performance is analyzed and it is found that transistor operates as normal devices. This designed device is more valuable since a nanocomposite InSb material is used as a channel in HEMT device, thereby leading to the nanosized HEMT device. In addition, InSb has the property of high saturation velocity and mobility which results in higher performance of the device than any other materials in III-V compounds. |
| format | Article |
| id | doaj-art-1fe74debf42f4be6804639fe5745fd56 |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-1fe74debf42f4be6804639fe5745fd562025-02-03T05:44:07ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422014-01-01201410.1155/2014/196732196732Design and Simulated Characteristics of Nanosized InSb Based Heterostructure DevicesT. D. Subash0T. Gnanasekaran1C. Divya2J. Jagannathan3Department of ECE, Annai Vailankanni College of Engineering, Tamil nadu, IndiaDepartment of IT, RMK College of Engineering and Technology, Chennai, IndiaCentre for Information Technology and Engineering, Manonmaniam Sundaranar University, Tirunelveli, IndiaDepartment of ECE, Shri Sapthagiri Institute of Technology, Vellore, IndiaIndium antimonide nanoparticles were synthesized at room temperature. X-ray diffraction measurements are utilized to characterize the nanocomposites. The InSb nanoparticle has an average particle size in a range of 47 mm to 99 mm which is observed using the XRD result. The InSb is a material which is used to design the transistor. For designing purpose the simulator TCAD is used, by which the HEMT device is structured and its performance is analyzed and it is found that transistor operates as normal devices. This designed device is more valuable since a nanocomposite InSb material is used as a channel in HEMT device, thereby leading to the nanosized HEMT device. In addition, InSb has the property of high saturation velocity and mobility which results in higher performance of the device than any other materials in III-V compounds.http://dx.doi.org/10.1155/2014/196732 |
| spellingShingle | T. D. Subash T. Gnanasekaran C. Divya J. Jagannathan Design and Simulated Characteristics of Nanosized InSb Based Heterostructure Devices Advances in Materials Science and Engineering |
| title | Design and Simulated Characteristics of Nanosized InSb Based Heterostructure Devices |
| title_full | Design and Simulated Characteristics of Nanosized InSb Based Heterostructure Devices |
| title_fullStr | Design and Simulated Characteristics of Nanosized InSb Based Heterostructure Devices |
| title_full_unstemmed | Design and Simulated Characteristics of Nanosized InSb Based Heterostructure Devices |
| title_short | Design and Simulated Characteristics of Nanosized InSb Based Heterostructure Devices |
| title_sort | design and simulated characteristics of nanosized insb based heterostructure devices |
| url | http://dx.doi.org/10.1155/2014/196732 |
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