Unconventional (anti)ferroelectricity in van der Waals group-IV monochalcogenides
Abstract Fundamentally, ferroelectrics must belong to a noncentrosymmetric space group, limiting the exploration of more new ferroelectric materials. We circumvent this limitation by triggering structure distortion and inducing ferroelectricity in centrosymmetric van der Waals group-IV monochalcogen...
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| Language: | English |
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Nature Portfolio
2025-02-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-57138-5 |
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| author | Fengrui Sui Yilun Yu Ju Chen Ruijuan Qi Rui Ge Yufan Zheng Beituo Liu Rong Jin Shijing Gong Fangyu Yue Junhao Chu |
| author_facet | Fengrui Sui Yilun Yu Ju Chen Ruijuan Qi Rui Ge Yufan Zheng Beituo Liu Rong Jin Shijing Gong Fangyu Yue Junhao Chu |
| author_sort | Fengrui Sui |
| collection | DOAJ |
| description | Abstract Fundamentally, ferroelectrics must belong to a noncentrosymmetric space group, limiting the exploration of more new ferroelectric materials. We circumvent this limitation by triggering structure distortion and inducing ferroelectricity in centrosymmetric van der Waals group-IV monochalcogenide GeSe semiconductor that features unexpected intrinsic out-of-plane antiferroelectricity. Double-type and single-type hysteresis loops from electric measurements, bonding distortion observed in in-situ atomic imaging, and perpendicular polarization uncovered by first-principles calculations, confirm the intrinsic out-of-plane antiferroelectricity and the antiferroelectric–ferroelectric transition induced by the vertical external electric-field. The hidden out-of-plane antiferroelectricity and field induced ferroelectric polarization in spatial-inversion symmetric GeSe makes it a new member of van der Waals layered semiconductors with both in-plane and out-of-plane ferroelectricity, and possibly, can be extended to all group-IV monochalcogenides and other centrosymmetric van der Waals layered materials. |
| format | Article |
| id | doaj-art-1f26bc2eb4714184bfbefb2b86f80803 |
| institution | OA Journals |
| issn | 2041-1723 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-1f26bc2eb4714184bfbefb2b86f808032025-08-20T02:19:57ZengNature PortfolioNature Communications2041-17232025-02-011611810.1038/s41467-025-57138-5Unconventional (anti)ferroelectricity in van der Waals group-IV monochalcogenidesFengrui Sui0Yilun Yu1Ju Chen2Ruijuan Qi3Rui Ge4Yufan Zheng5Beituo Liu6Rong Jin7Shijing Gong8Fangyu Yue9Junhao Chu10Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal UniversityKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal UniversityEngineering Research Center of Nanophotonics & Advanced Instrument (MOE), School of Physics and Electronic Science, East China Normal UniversityKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal UniversityKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal UniversityKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal UniversityKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal UniversityKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal UniversityEngineering Research Center of Nanophotonics & Advanced Instrument (MOE), School of Physics and Electronic Science, East China Normal UniversityKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal UniversityKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal UniversityAbstract Fundamentally, ferroelectrics must belong to a noncentrosymmetric space group, limiting the exploration of more new ferroelectric materials. We circumvent this limitation by triggering structure distortion and inducing ferroelectricity in centrosymmetric van der Waals group-IV monochalcogenide GeSe semiconductor that features unexpected intrinsic out-of-plane antiferroelectricity. Double-type and single-type hysteresis loops from electric measurements, bonding distortion observed in in-situ atomic imaging, and perpendicular polarization uncovered by first-principles calculations, confirm the intrinsic out-of-plane antiferroelectricity and the antiferroelectric–ferroelectric transition induced by the vertical external electric-field. The hidden out-of-plane antiferroelectricity and field induced ferroelectric polarization in spatial-inversion symmetric GeSe makes it a new member of van der Waals layered semiconductors with both in-plane and out-of-plane ferroelectricity, and possibly, can be extended to all group-IV monochalcogenides and other centrosymmetric van der Waals layered materials.https://doi.org/10.1038/s41467-025-57138-5 |
| spellingShingle | Fengrui Sui Yilun Yu Ju Chen Ruijuan Qi Rui Ge Yufan Zheng Beituo Liu Rong Jin Shijing Gong Fangyu Yue Junhao Chu Unconventional (anti)ferroelectricity in van der Waals group-IV monochalcogenides Nature Communications |
| title | Unconventional (anti)ferroelectricity in van der Waals group-IV monochalcogenides |
| title_full | Unconventional (anti)ferroelectricity in van der Waals group-IV monochalcogenides |
| title_fullStr | Unconventional (anti)ferroelectricity in van der Waals group-IV monochalcogenides |
| title_full_unstemmed | Unconventional (anti)ferroelectricity in van der Waals group-IV monochalcogenides |
| title_short | Unconventional (anti)ferroelectricity in van der Waals group-IV monochalcogenides |
| title_sort | unconventional anti ferroelectricity in van der waals group iv monochalcogenides |
| url | https://doi.org/10.1038/s41467-025-57138-5 |
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