Y-Function Analysis of the Low Temperature Behavior of Ultrathin Film FD SOI MOSFETs
The respective transfer characteristics of the ultrathin body (UTB) and gate recessed channel (GRC) device, sharing same W/L ratio but having a channel thickness of 46 nm, and 2.2 nm respectively, were measured at 300 K and at 77 K. By decreasing the temperature we found that the electrical behavior...
Saved in:
Main Authors: | A. Karsenty, A. Chelly |
---|---|
Format: | Article |
Language: | English |
Published: |
Wiley
2014-01-01
|
Series: | Active and Passive Electronic Components |
Online Access: | http://dx.doi.org/10.1155/2014/697369 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Investigation of the Low-Temperature Behavior of
FD-SOI MOSFETs in the Saturation Regime Using Y and Z Functions
by: A. Karsenty, et al.
Published: (2014-01-01) -
Usage and Limitation of Standard Mobility Models for TCAD Simulation of Nanoscaled FD-SOI MOSFETs
by: A. Ciprut, et al.
Published: (2015-01-01) -
Influence of Series Massive Resistance on Capacitance and Conductance Characteristics in Gate-Recessed Nanoscale SOI MOSFETs
by: Avraham Karsenty, et al.
Published: (2013-01-01) -
Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation
by: Yasuhisa Omura
Published: (2011-01-01) -
Analysis of Kink Reduction in SOI MOSFET Using Selective Back Oxide Structure
by: M. Narayanan, et al.
Published: (2012-01-01)