Y-Function Analysis of the Low Temperature Behavior of Ultrathin Film FD SOI MOSFETs
The respective transfer characteristics of the ultrathin body (UTB) and gate recessed channel (GRC) device, sharing same W/L ratio but having a channel thickness of 46 nm, and 2.2 nm respectively, were measured at 300 K and at 77 K. By decreasing the temperature we found that the electrical behavior...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2014-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2014/697369 |
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| Summary: | The respective transfer characteristics of the ultrathin body (UTB) and gate recessed channel (GRC) device, sharing same W/L ratio but having a channel thickness of 46 nm, and 2.2 nm respectively, were measured at 300 K and at 77 K. By decreasing the temperature we found that the electrical behaviors of these devices were radically opposite: if for UTB device, the conductivity was increased, the opposite effect was observed for GRC. The low field electron mobility and series resistance RSD values were extracted using a method based on Y-function for both the temperatures. If RSD low values were found for UTB, very high values (>1 MΩ) were extracted for GRC. Surprisingly, for the last device, the effective field mobility is found very low (<1 cm2/Vs) and is decreasing by lowering the temperature. After having discussed the limits of this analysis.This case study illustrates the advantage of the Y-analysis in discriminating a parameter of great relevance for nanoscale devices and gives a coherent interpretation of an anomalous electrical behavior. |
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| ISSN: | 0882-7516 1563-5031 |