Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning
We have investigated the effect of hot electron stress on the electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) of hydrogen poisoning. The AlGaN/GaN HEMTs were biased at the semi-on state, and they suffered from the hot electron stress. The devices of hydrogen poisoning w...
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| Language: | English |
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IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/8521669/ |
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| author | J. He Y. Q. Chen Z. Y. He Y. F. En C. Liu Y. Huang Z. Li M. H. Tang |
| author_facet | J. He Y. Q. Chen Z. Y. He Y. F. En C. Liu Y. Huang Z. Li M. H. Tang |
| author_sort | J. He |
| collection | DOAJ |
| description | We have investigated the effect of hot electron stress on the electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) of hydrogen poisoning. The AlGaN/GaN HEMTs were biased at the semi-on state, and they suffered from the hot electron stress. The devices of hydrogen poisoning were degraded, while there is almost no degradation for the fresh ones. The hot electron stress leads to the significantly positive shift of threshold voltage and the notable decrease of drain-to-source current for the AlGaN/GaN HEMTs of hydrogen poisoning. For the AlGaN/GaN HEMTs of hydrogen poisoning, the trap density increases by about one order of magnitude after the hot electron stress experiment. The physical mechanism can be attributed to electrically active traps due to the dehydrogenation of passivated point defects at AlGaN surface, AlGaN barrier layer, and heterostructure interface. The results of this paper may be useful in the design and application of AlGaN/GaN HEMTs. |
| format | Article |
| id | doaj-art-1ea23adf467e47d9be76f31c85bb49ab |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2019-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-1ea23adf467e47d9be76f31c85bb49ab2025-08-22T23:09:16ZengIEEEIEEE Journal of the Electron Devices Society2168-67342019-01-017768110.1109/JEDS.2018.28794808521669Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen PoisoningJ. He0Y. Q. Chen1https://orcid.org/0000-0001-6901-3000Z. Y. He2https://orcid.org/0000-0002-0064-3626Y. F. En3C. Liu4https://orcid.org/0000-0003-1829-0838Y. Huang5Z. Li6M. H. Tang7Key Laboratory of Key Film Materials and Application for Equipments (Hunan Province), School of Materials Science and Engineering, Xiangtan University, Xiangtan, ChinaScience and Technology on Reliability Physics and Application of Electronic Component Laboratory, No.5 Electronics Research Institute, Ministry of Industry and Information Technology Guangzhou, Guandong, ChinaScience and Technology on Reliability Physics and Application of Electronic Component Laboratory, No.5 Electronics Research Institute, Ministry of Industry and Information Technology Guangzhou, Guandong, ChinaScience and Technology on Reliability Physics and Application of Electronic Component Laboratory, No.5 Electronics Research Institute, Ministry of Industry and Information Technology Guangzhou, Guandong, ChinaScience and Technology on Reliability Physics and Application of Electronic Component Laboratory, No.5 Electronics Research Institute, Ministry of Industry and Information Technology Guangzhou, Guandong, ChinaScience and Technology on Reliability Physics and Application of Electronic Component Laboratory, No.5 Electronics Research Institute, Ministry of Industry and Information Technology Guangzhou, Guandong, ChinaKey Laboratory of Key Film Materials and Application for Equipments (Hunan Province), School of Materials Science and Engineering, Xiangtan University, Xiangtan, ChinaKey Laboratory of Key Film Materials and Application for Equipments (Hunan Province), School of Materials Science and Engineering, Xiangtan University, Xiangtan, ChinaWe have investigated the effect of hot electron stress on the electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) of hydrogen poisoning. The AlGaN/GaN HEMTs were biased at the semi-on state, and they suffered from the hot electron stress. The devices of hydrogen poisoning were degraded, while there is almost no degradation for the fresh ones. The hot electron stress leads to the significantly positive shift of threshold voltage and the notable decrease of drain-to-source current for the AlGaN/GaN HEMTs of hydrogen poisoning. For the AlGaN/GaN HEMTs of hydrogen poisoning, the trap density increases by about one order of magnitude after the hot electron stress experiment. The physical mechanism can be attributed to electrically active traps due to the dehydrogenation of passivated point defects at AlGaN surface, AlGaN barrier layer, and heterostructure interface. The results of this paper may be useful in the design and application of AlGaN/GaN HEMTs.https://ieeexplore.ieee.org/document/8521669/GaN HEMThydrogen poisoninghot electron stress |
| spellingShingle | J. He Y. Q. Chen Z. Y. He Y. F. En C. Liu Y. Huang Z. Li M. H. Tang Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning IEEE Journal of the Electron Devices Society GaN HEMT hydrogen poisoning hot electron stress |
| title | Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning |
| title_full | Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning |
| title_fullStr | Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning |
| title_full_unstemmed | Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning |
| title_short | Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning |
| title_sort | effect of hot electron stress on algan gan hemts of hydrogen poisoning |
| topic | GaN HEMT hydrogen poisoning hot electron stress |
| url | https://ieeexplore.ieee.org/document/8521669/ |
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