Density Functional Theory Insights into Conduction Mechanisms in Perovskite-Type RCoO<sub>3</sub> Nanofibers for Future Resistive Random-Access Memory Applications

In the era of artificial intelligence and Internet of Things, data storage has an important impact on the future development direction of data analysis. Resistive random-access memory (RRAM) devices are the research hotspot in the era of artificial intelligence and Internet of Things. Perovskite-typ...

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Main Authors: Quanli Hu, Hanqiong Luo, Chao Song, Yin Wang, Bin Yue, Jinghai Liu
Format: Article
Language:English
Published: MDPI AG 2024-12-01
Series:Molecules
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Online Access:https://www.mdpi.com/1420-3049/29/24/6056
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author Quanli Hu
Hanqiong Luo
Chao Song
Yin Wang
Bin Yue
Jinghai Liu
author_facet Quanli Hu
Hanqiong Luo
Chao Song
Yin Wang
Bin Yue
Jinghai Liu
author_sort Quanli Hu
collection DOAJ
description In the era of artificial intelligence and Internet of Things, data storage has an important impact on the future development direction of data analysis. Resistive random-access memory (RRAM) devices are the research hotspot in the era of artificial intelligence and Internet of Things. Perovskite-type rare-earth metal oxides are common functional materials and considered promising candidates for RRAM devices because their interesting electronic properties depend on the interaction between oxygen ions, transition metals, and rare-earth metals. LaCoO<sub>3</sub>, NdCoO<sub>3</sub>, and SmCoO<sub>3</sub> are typical rare-earth cobaltates (RCoO<sub>3</sub>). These perovskite materials were fabricated by electrospinning and the calcination method. The aim of this study was to investigate the resistive switching effect in the RCoO<sub>3</sub> structure. The oxygen vacancies in RCoO<sub>3</sub> are helpful to form conductive filaments, which dominates the resistance transition mechanism of Pt/RCoO<sub>3</sub>/Pt. The electronic properties of RCoO<sub>3</sub> were investigated, including the barrier height and the shape of the conductive filaments. This study confirmed the potential application of LaCoO<sub>3</sub>, NdCoO<sub>3</sub>, and SmCoO<sub>3</sub> in memory storage devices.
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institution Kabale University
issn 1420-3049
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publishDate 2024-12-01
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spelling doaj-art-1e8a41301c01471bb64e6183a28b480d2024-12-27T14:43:04ZengMDPI AGMolecules1420-30492024-12-012924605610.3390/molecules29246056Density Functional Theory Insights into Conduction Mechanisms in Perovskite-Type RCoO<sub>3</sub> Nanofibers for Future Resistive Random-Access Memory ApplicationsQuanli Hu0Hanqiong Luo1Chao Song2Yin Wang3Bin Yue4Jinghai Liu5Inner Mongolia Key Lab of Solid State Chemistry for Battery, Inner Mongolia Engineering Research Center of Lithium-Sulfur Battery Energy Storage, College of Chemistry and Materials Science, Inner Mongolia Minzu University, Tongliao 028000, ChinaInner Mongolia Key Lab of Solid State Chemistry for Battery, Inner Mongolia Engineering Research Center of Lithium-Sulfur Battery Energy Storage, College of Chemistry and Materials Science, Inner Mongolia Minzu University, Tongliao 028000, ChinaInner Mongolia Key Lab of Solid State Chemistry for Battery, Inner Mongolia Engineering Research Center of Lithium-Sulfur Battery Energy Storage, College of Chemistry and Materials Science, Inner Mongolia Minzu University, Tongliao 028000, ChinaInner Mongolia Key Lab of Solid State Chemistry for Battery, Inner Mongolia Engineering Research Center of Lithium-Sulfur Battery Energy Storage, College of Chemistry and Materials Science, Inner Mongolia Minzu University, Tongliao 028000, ChinaDepartment of Chemistry, Tonghua Normal University, Tonghua 134002, ChinaInner Mongolia Key Lab of Solid State Chemistry for Battery, Inner Mongolia Engineering Research Center of Lithium-Sulfur Battery Energy Storage, College of Chemistry and Materials Science, Inner Mongolia Minzu University, Tongliao 028000, ChinaIn the era of artificial intelligence and Internet of Things, data storage has an important impact on the future development direction of data analysis. Resistive random-access memory (RRAM) devices are the research hotspot in the era of artificial intelligence and Internet of Things. Perovskite-type rare-earth metal oxides are common functional materials and considered promising candidates for RRAM devices because their interesting electronic properties depend on the interaction between oxygen ions, transition metals, and rare-earth metals. LaCoO<sub>3</sub>, NdCoO<sub>3</sub>, and SmCoO<sub>3</sub> are typical rare-earth cobaltates (RCoO<sub>3</sub>). These perovskite materials were fabricated by electrospinning and the calcination method. The aim of this study was to investigate the resistive switching effect in the RCoO<sub>3</sub> structure. The oxygen vacancies in RCoO<sub>3</sub> are helpful to form conductive filaments, which dominates the resistance transition mechanism of Pt/RCoO<sub>3</sub>/Pt. The electronic properties of RCoO<sub>3</sub> were investigated, including the barrier height and the shape of the conductive filaments. This study confirmed the potential application of LaCoO<sub>3</sub>, NdCoO<sub>3</sub>, and SmCoO<sub>3</sub> in memory storage devices.https://www.mdpi.com/1420-3049/29/24/6056cobaltatesdensity functional theoryperovskiteresistive random-access memory
spellingShingle Quanli Hu
Hanqiong Luo
Chao Song
Yin Wang
Bin Yue
Jinghai Liu
Density Functional Theory Insights into Conduction Mechanisms in Perovskite-Type RCoO<sub>3</sub> Nanofibers for Future Resistive Random-Access Memory Applications
Molecules
cobaltates
density functional theory
perovskite
resistive random-access memory
title Density Functional Theory Insights into Conduction Mechanisms in Perovskite-Type RCoO<sub>3</sub> Nanofibers for Future Resistive Random-Access Memory Applications
title_full Density Functional Theory Insights into Conduction Mechanisms in Perovskite-Type RCoO<sub>3</sub> Nanofibers for Future Resistive Random-Access Memory Applications
title_fullStr Density Functional Theory Insights into Conduction Mechanisms in Perovskite-Type RCoO<sub>3</sub> Nanofibers for Future Resistive Random-Access Memory Applications
title_full_unstemmed Density Functional Theory Insights into Conduction Mechanisms in Perovskite-Type RCoO<sub>3</sub> Nanofibers for Future Resistive Random-Access Memory Applications
title_short Density Functional Theory Insights into Conduction Mechanisms in Perovskite-Type RCoO<sub>3</sub> Nanofibers for Future Resistive Random-Access Memory Applications
title_sort density functional theory insights into conduction mechanisms in perovskite type rcoo sub 3 sub nanofibers for future resistive random access memory applications
topic cobaltates
density functional theory
perovskite
resistive random-access memory
url https://www.mdpi.com/1420-3049/29/24/6056
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